MEMORY CELL OF CHARGE-TRAPPING NON-VOLATILE MEMORY

A memory cell of a charge-trapping non-volatile memory is provided. The memory cell is formed on a well region of a semiconductor substrate. The memory cell includes a storage transistor. A gate structure of the storage transistor includes a first tunneling layer, a second tunneling layer, a trappin...

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Bibliographische Detailangaben

Hauptverfasser:	LAI, Tsung-Mu, HSU, Chia-Jung, SHEN, Cheng-Yen, LI, Chun-Hsiao
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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