METHOD OF MANUFACTURING MEMORY DEVICE HAVING MEMORY CELL WITH REDUCED PROTRUSION

The present application provides a method of manufacturing a memory device. The method includes steps of providing a semiconductor substrate having a fin portion protruding from a surface of the semiconductor substrate; disposing a semiconductive material over the semiconductor substrate and conform...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: CHUANG, Ching-Kai
Format: Patent
Sprache:eng
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