STATIC RANDOM ACCESS MEMORY USING VERTICAL TRANSPORT FIELD EFFECT TRANSISTORS

A memory device includes a first field effect transistor (FET) stack on a first bottom source/drain region, which includes a first vertical transport field effect transistor (VTFET) device between a second VTFET device and the first source/drain region, and a second FET stack on a second bottom sour...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	Rahman, Ardasheir, Li, Tao, Young, Albert M, Kang, Tsung-Sheng
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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