ACOUSTIC WAVE DEVICE, WAFER, AND METHOD OF MANUFACTURING WAFER

An acoustic wave device includes a support substrate, a piezoelectric layer provided on the support substrate, at least a pair of comb-shaped electrodes provided on the piezoelectric layer, each of the comb-shaped electrodes including a plurality of electrode fingers, and an insulating layer provide...

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Hauptverfasser: SATO, Koichi, YAMAMOTO, Shinji, NAKAZATO, Toshiharu
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creator SATO, Koichi
YAMAMOTO, Shinji
NAKAZATO, Toshiharu
description An acoustic wave device includes a support substrate, a piezoelectric layer provided on the support substrate, at least a pair of comb-shaped electrodes provided on the piezoelectric layer, each of the comb-shaped electrodes including a plurality of electrode fingers, and an insulating layer provided between the support substrate and the piezoelectric layer, the insulating layer having, in at least a part thereof, a plurality of void regions of which extending directions are different from each other when viewed from a thickness direction of the support substrate, a width in the corresponding extending direction of each of the void regions being longer than a width in a direction orthogonal to the corresponding extending direction when viewed from the thickness direction of the support substrate.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2023208395A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2023208395A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2023208395A13</originalsourceid><addsrcrecordid>eNrjZLBzdPYPDQ7xdFYIdwxzVXBxDfN0dtUBctxcg3QUHP1cFHxdQzz8XRT83RR8Hf1C3RydQ0KDPP3cIUp4GFjTEnOKU3mhNDeDsptriLOHbmpBfnxqcUFicmpeakl8aLCRgZGxkYGFsaWpo6ExcaoAxbQqmg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>ACOUSTIC WAVE DEVICE, WAFER, AND METHOD OF MANUFACTURING WAFER</title><source>esp@cenet</source><creator>SATO, Koichi ; YAMAMOTO, Shinji ; NAKAZATO, Toshiharu</creator><creatorcontrib>SATO, Koichi ; YAMAMOTO, Shinji ; NAKAZATO, Toshiharu</creatorcontrib><description>An acoustic wave device includes a support substrate, a piezoelectric layer provided on the support substrate, at least a pair of comb-shaped electrodes provided on the piezoelectric layer, each of the comb-shaped electrodes including a plurality of electrode fingers, and an insulating layer provided between the support substrate and the piezoelectric layer, the insulating layer having, in at least a part thereof, a plurality of void regions of which extending directions are different from each other when viewed from a thickness direction of the support substrate, a width in the corresponding extending direction of each of the void regions being longer than a width in a direction orthogonal to the corresponding extending direction when viewed from the thickness direction of the support substrate.</description><language>eng</language><subject>BASIC ELECTRONIC CIRCUITRY ; ELECTRICITY ; IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS ; RESONATORS</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230629&amp;DB=EPODOC&amp;CC=US&amp;NR=2023208395A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230629&amp;DB=EPODOC&amp;CC=US&amp;NR=2023208395A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SATO, Koichi</creatorcontrib><creatorcontrib>YAMAMOTO, Shinji</creatorcontrib><creatorcontrib>NAKAZATO, Toshiharu</creatorcontrib><title>ACOUSTIC WAVE DEVICE, WAFER, AND METHOD OF MANUFACTURING WAFER</title><description>An acoustic wave device includes a support substrate, a piezoelectric layer provided on the support substrate, at least a pair of comb-shaped electrodes provided on the piezoelectric layer, each of the comb-shaped electrodes including a plurality of electrode fingers, and an insulating layer provided between the support substrate and the piezoelectric layer, the insulating layer having, in at least a part thereof, a plurality of void regions of which extending directions are different from each other when viewed from a thickness direction of the support substrate, a width in the corresponding extending direction of each of the void regions being longer than a width in a direction orthogonal to the corresponding extending direction when viewed from the thickness direction of the support substrate.</description><subject>BASIC ELECTRONIC CIRCUITRY</subject><subject>ELECTRICITY</subject><subject>IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS</subject><subject>RESONATORS</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZLBzdPYPDQ7xdFYIdwxzVXBxDfN0dtUBctxcg3QUHP1cFHxdQzz8XRT83RR8Hf1C3RydQ0KDPP3cIUp4GFjTEnOKU3mhNDeDsptriLOHbmpBfnxqcUFicmpeakl8aLCRgZGxkYGFsaWpo6ExcaoAxbQqmg</recordid><startdate>20230629</startdate><enddate>20230629</enddate><creator>SATO, Koichi</creator><creator>YAMAMOTO, Shinji</creator><creator>NAKAZATO, Toshiharu</creator><scope>EVB</scope></search><sort><creationdate>20230629</creationdate><title>ACOUSTIC WAVE DEVICE, WAFER, AND METHOD OF MANUFACTURING WAFER</title><author>SATO, Koichi ; YAMAMOTO, Shinji ; NAKAZATO, Toshiharu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2023208395A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRONIC CIRCUITRY</topic><topic>ELECTRICITY</topic><topic>IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS</topic><topic>RESONATORS</topic><toplevel>online_resources</toplevel><creatorcontrib>SATO, Koichi</creatorcontrib><creatorcontrib>YAMAMOTO, Shinji</creatorcontrib><creatorcontrib>NAKAZATO, Toshiharu</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SATO, Koichi</au><au>YAMAMOTO, Shinji</au><au>NAKAZATO, Toshiharu</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ACOUSTIC WAVE DEVICE, WAFER, AND METHOD OF MANUFACTURING WAFER</title><date>2023-06-29</date><risdate>2023</risdate><abstract>An acoustic wave device includes a support substrate, a piezoelectric layer provided on the support substrate, at least a pair of comb-shaped electrodes provided on the piezoelectric layer, each of the comb-shaped electrodes including a plurality of electrode fingers, and an insulating layer provided between the support substrate and the piezoelectric layer, the insulating layer having, in at least a part thereof, a plurality of void regions of which extending directions are different from each other when viewed from a thickness direction of the support substrate, a width in the corresponding extending direction of each of the void regions being longer than a width in a direction orthogonal to the corresponding extending direction when viewed from the thickness direction of the support substrate.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS
RESONATORS
title ACOUSTIC WAVE DEVICE, WAFER, AND METHOD OF MANUFACTURING WAFER
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T00%3A02%3A52IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=SATO,%20Koichi&rft.date=2023-06-29&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2023208395A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true