NON-VOLATILE MEMORY WITH EFFICIENT SIGNAL ROUTING

NON-VOLATILE MEMORY WITH EFFICIENT SIGNAL ROUTING

An integrated memory assembly comprises a control die bonded to a memory die. The memory die includes multiple non-volatile memory structures (e.g., planes, arrays, groups of blocks, etc.), each comprising a stack of alternating conductive and dielectric layers forming staircases at one or more edge...

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Hauptverfasser: Toyama, Fumiaki, Shao, Shiqian, Pham, Tuan
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Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Toyama, Fumiaki
Shao, Shiqian
Pham, Tuan
description An integrated memory assembly comprises a control die bonded to a memory die. The memory die includes multiple non-volatile memory structures (e.g., planes, arrays, groups of blocks, etc.), each comprising a stack of alternating conductive and dielectric layers forming staircases at one or more edges of the non-volatile memory structures. The non-volatile memory structures are positioned with gaps between the non-volatile memory structures such that the gaps separate the staircases of adjacent non-volatile memory structures. Metal interlayer segments positioned in the gaps are connected to a top metal layer positioned above non-volatile memory structures and to one or more electrical circuits on the control die via zero, one or more other metal layers/segments.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title NON-VOLATILE MEMORY WITH EFFICIENT SIGNAL ROUTING
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