ATOMIC-LAYER-DEPOSITION EQUIPMENT AND ATOMICLAYER-DEPOSITION METHOD BY USING THE SAME

An atomic-layer-deposition equipment, includes a reaction chamber, a carrier, a coverage mechanism and a dispensing unit. The carrier and the dispensing unit are disposed within a containing space of the reaction chamber. The coverage mechanism includes a connecting shaft and a cover plate, wherein...

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1. Verfasser:	LIN, JINGNG
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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creator	LIN, JINGNG
description	An atomic-layer-deposition equipment, includes a reaction chamber, a carrier, a coverage mechanism and a dispensing unit. The carrier and the dispensing unit are disposed within a containing space of the reaction chamber. The coverage mechanism includes a connecting shaft and a cover plate, wherein the cover plate is disposed within the containing space and faces the carrier, the connecting shaft is connected to the cover plate and extends through the reaction chamber. The carrier is configured to carry a substrate assembly and move the substrate assembly with respect to the coverage mechanism, so as to allow the cover plate contacting a top surface of the substrate assembly. When the cover plate contacts the top surface of the substrate assembly, the dispensing unit surrounds the substrate assembly and dispenses a precursor to a lateral surface of the substrate assembly, so as to form a protective layer thereon.
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The carrier and the dispensing unit are disposed within a containing space of the reaction chamber. The coverage mechanism includes a connecting shaft and a cover plate, wherein the cover plate is disposed within the containing space and faces the carrier, the connecting shaft is connected to the cover plate and extends through the reaction chamber. The carrier is configured to carry a substrate assembly and move the substrate assembly with respect to the coverage mechanism, so as to allow the cover plate contacting a top surface of the substrate assembly. When the cover plate contacts the top surface of the substrate assembly, the dispensing unit surrounds the substrate assembly and dispenses a precursor to a lateral surface of the substrate assembly, so as to form a protective layer thereon.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230629&DB=EPODOC&CC=US&NR=2023203653A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230629&DB=EPODOC&CC=US&NR=2023203653A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>LIN, JINGNG</creatorcontrib><title>ATOMIC-LAYER-DEPOSITION EQUIPMENT AND ATOMICLAYER-DEPOSITION METHOD BY USING THE SAME</title><description>An atomic-layer-deposition equipment, includes a reaction chamber, a carrier, a coverage mechanism and a dispensing unit. The carrier and the dispensing unit are disposed within a containing space of the reaction chamber. The coverage mechanism includes a connecting shaft and a cover plate, wherein the cover plate is disposed within the containing space and faces the carrier, the connecting shaft is connected to the cover plate and extends through the reaction chamber. The carrier is configured to carry a substrate assembly and move the substrate assembly with respect to the coverage mechanism, so as to allow the cover plate contacting a top surface of the substrate assembly. When the cover plate contacts the top surface of the substrate assembly, the dispensing unit surrounds the substrate assembly and dispenses a precursor to a lateral surface of the substrate assembly, so as to form a protective layer thereon.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZAh1DPH39XTW9XGMdA3SdXEN8A_2DPH091NwDQz1DPB19QtRcPRzUYCowlDk6xri4e-i4BSpEBrs6eeuEOLhqhDs6OvKw8CalphTnMoLpbkZlN1cQ5w9dFML8uNTiwsSk1PzUkviQ4ONDIyMjQyMzUyNHQ2NiVMFAE48MY8</recordid><startdate>20230629</startdate><enddate>20230629</enddate><creator>LIN, JINGNG</creator><scope>EVB</scope></search><sort><creationdate>20230629</creationdate><title>ATOMIC-LAYER-DEPOSITION EQUIPMENT AND ATOMICLAYER-DEPOSITION METHOD BY USING THE SAME</title><author>LIN, JINGNG</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2023203653A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>LIN, JINGNG</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>LIN, JINGNG</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ATOMIC-LAYER-DEPOSITION EQUIPMENT AND ATOMICLAYER-DEPOSITION METHOD BY USING THE SAME</title><date>2023-06-29</date><risdate>2023</risdate><abstract>An atomic-layer-deposition equipment, includes a reaction chamber, a carrier, a coverage mechanism and a dispensing unit. The carrier and the dispensing unit are disposed within a containing space of the reaction chamber. The coverage mechanism includes a connecting shaft and a cover plate, wherein the cover plate is disposed within the containing space and faces the carrier, the connecting shaft is connected to the cover plate and extends through the reaction chamber. The carrier is configured to carry a substrate assembly and move the substrate assembly with respect to the coverage mechanism, so as to allow the cover plate contacting a top surface of the substrate assembly. When the cover plate contacts the top surface of the substrate assembly, the dispensing unit surrounds the substrate assembly and dispenses a precursor to a lateral surface of the substrate assembly, so as to form a protective layer thereon.</abstract><oa>free_for_read</oa></addata></record>
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language	eng
recordid	cdi_epo_espacenet_US2023203653A1
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subjects	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
title	ATOMIC-LAYER-DEPOSITION EQUIPMENT AND ATOMICLAYER-DEPOSITION METHOD BY USING THE SAME
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