LOW TEMPERATURE HYBRID BONDING

LOW TEMPERATURE HYBRID BONDING

A semiconductor device includes a first die, the first die including a first dielectric layer and a plurality of first bond pads formed within apertures in the first dielectric layer, and a second die bonded to the first die, the second die including a second dielectric layer and a plurality of seco...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: SWAMINATHAN, RAJA, WILKERSON, BRETT P, AGARWAL, RAHUL, SHAH, PRIYAL
Format: Patent
Sprache:eng
Schlagworte:
CLADDING OR PLATING BY SOLDERING OR WELDING
CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING
MACHINE TOOLS
METAL-WORKING NOT OTHERWISE PROVIDED FOR
PERFORMING OPERATIONS
SOLDERING OR UNSOLDERING
TRANSPORTING
WELDING
WORKING BY LASER BEAM
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator SWAMINATHAN, RAJA
WILKERSON, BRETT P
AGARWAL, RAHUL
SHAH, PRIYAL
description A semiconductor device includes a first die, the first die including a first dielectric layer and a plurality of first bond pads formed within apertures in the first dielectric layer, and a second die bonded to the first die, the second die including a second dielectric layer and a plurality of second bond pads protruding from the second dielectric layer. The first die is bonded to the second die such that the plurality of second bond pads protrude into the apertures in the first dielectric layer to establish respective metallurgical bonds with the plurality of first bond pads. A reduction in the distance between the respective bond pads of the dies results in a lower temperature for establishing a hybrid bond.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2023201952A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2023201952A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2023201952A13</originalsourceid><addsrcrecordid>eNrjZJDz8Q9XCHH1DXANcgwJDXJV8Ih0CvJ0UXDy93Px9HPnYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXxocFGBkbGRgaGlqZGjobGxKkCAEENIlA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>LOW TEMPERATURE HYBRID BONDING</title><source>esp@cenet</source><creator>SWAMINATHAN, RAJA ; WILKERSON, BRETT P ; AGARWAL, RAHUL ; SHAH, PRIYAL</creator><creatorcontrib>SWAMINATHAN, RAJA ; WILKERSON, BRETT P ; AGARWAL, RAHUL ; SHAH, PRIYAL</creatorcontrib><description>A semiconductor device includes a first die, the first die including a first dielectric layer and a plurality of first bond pads formed within apertures in the first dielectric layer, and a second die bonded to the first die, the second die including a second dielectric layer and a plurality of second bond pads protruding from the second dielectric layer. The first die is bonded to the second die such that the plurality of second bond pads protrude into the apertures in the first dielectric layer to establish respective metallurgical bonds with the plurality of first bond pads. A reduction in the distance between the respective bond pads of the dies results in a lower temperature for establishing a hybrid bond.</description><language>eng</language><subject>CLADDING OR PLATING BY SOLDERING OR WELDING ; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING ; MACHINE TOOLS ; METAL-WORKING NOT OTHERWISE PROVIDED FOR ; PERFORMING OPERATIONS ; SOLDERING OR UNSOLDERING ; TRANSPORTING ; WELDING ; WORKING BY LASER BEAM</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230629&amp;DB=EPODOC&amp;CC=US&amp;NR=2023201952A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76318</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230629&amp;DB=EPODOC&amp;CC=US&amp;NR=2023201952A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SWAMINATHAN, RAJA</creatorcontrib><creatorcontrib>WILKERSON, BRETT P</creatorcontrib><creatorcontrib>AGARWAL, RAHUL</creatorcontrib><creatorcontrib>SHAH, PRIYAL</creatorcontrib><title>LOW TEMPERATURE HYBRID BONDING</title><description>A semiconductor device includes a first die, the first die including a first dielectric layer and a plurality of first bond pads formed within apertures in the first dielectric layer, and a second die bonded to the first die, the second die including a second dielectric layer and a plurality of second bond pads protruding from the second dielectric layer. The first die is bonded to the second die such that the plurality of second bond pads protrude into the apertures in the first dielectric layer to establish respective metallurgical bonds with the plurality of first bond pads. A reduction in the distance between the respective bond pads of the dies results in a lower temperature for establishing a hybrid bond.</description><subject>CLADDING OR PLATING BY SOLDERING OR WELDING</subject><subject>CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING</subject><subject>MACHINE TOOLS</subject><subject>METAL-WORKING NOT OTHERWISE PROVIDED FOR</subject><subject>PERFORMING OPERATIONS</subject><subject>SOLDERING OR UNSOLDERING</subject><subject>TRANSPORTING</subject><subject>WELDING</subject><subject>WORKING BY LASER BEAM</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJDz8Q9XCHH1DXANcgwJDXJV8Ih0CvJ0UXDy93Px9HPnYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXxocFGBkbGRgaGlqZGjobGxKkCAEENIlA</recordid><startdate>20230629</startdate><enddate>20230629</enddate><creator>SWAMINATHAN, RAJA</creator><creator>WILKERSON, BRETT P</creator><creator>AGARWAL, RAHUL</creator><creator>SHAH, PRIYAL</creator><scope>EVB</scope></search><sort><creationdate>20230629</creationdate><title>LOW TEMPERATURE HYBRID BONDING</title><author>SWAMINATHAN, RAJA ; WILKERSON, BRETT P ; AGARWAL, RAHUL ; SHAH, PRIYAL</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2023201952A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>CLADDING OR PLATING BY SOLDERING OR WELDING</topic><topic>CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING</topic><topic>MACHINE TOOLS</topic><topic>METAL-WORKING NOT OTHERWISE PROVIDED FOR</topic><topic>PERFORMING OPERATIONS</topic><topic>SOLDERING OR UNSOLDERING</topic><topic>TRANSPORTING</topic><topic>WELDING</topic><topic>WORKING BY LASER BEAM</topic><toplevel>online_resources</toplevel><creatorcontrib>SWAMINATHAN, RAJA</creatorcontrib><creatorcontrib>WILKERSON, BRETT P</creatorcontrib><creatorcontrib>AGARWAL, RAHUL</creatorcontrib><creatorcontrib>SHAH, PRIYAL</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SWAMINATHAN, RAJA</au><au>WILKERSON, BRETT P</au><au>AGARWAL, RAHUL</au><au>SHAH, PRIYAL</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>LOW TEMPERATURE HYBRID BONDING</title><date>2023-06-29</date><risdate>2023</risdate><abstract>A semiconductor device includes a first die, the first die including a first dielectric layer and a plurality of first bond pads formed within apertures in the first dielectric layer, and a second die bonded to the first die, the second die including a second dielectric layer and a plurality of second bond pads protruding from the second dielectric layer. The first die is bonded to the second die such that the plurality of second bond pads protrude into the apertures in the first dielectric layer to establish respective metallurgical bonds with the plurality of first bond pads. A reduction in the distance between the respective bond pads of the dies results in a lower temperature for establishing a hybrid bond.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US2023201952A1
source esp@cenet
subjects CLADDING OR PLATING BY SOLDERING OR WELDING
CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING
MACHINE TOOLS
METAL-WORKING NOT OTHERWISE PROVIDED FOR
PERFORMING OPERATIONS
SOLDERING OR UNSOLDERING
TRANSPORTING
WELDING
WORKING BY LASER BEAM
title LOW TEMPERATURE HYBRID BONDING
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-11T19%3A12%3A17IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=SWAMINATHAN,%20RAJA&rft.date=2023-06-29&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2023201952A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true