SELECTIVE ENCAPSULATION OF MEMRISTIVE ELEMENT

SELECTIVE ENCAPSULATION OF MEMRISTIVE ELEMENT

A phase change memory structure including a bottom electrode; a top electrode; a first phase change material between the bottom electrode and the top electrode; a first dielectric surrounding the first phase change material; a second dielectric surrounding the top electrode, the second dielectric ha...

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Hauptverfasser: Shoudy, Matthew T, Brew, Kevin W, Ok, Injo, Saraf, Iqbal Rashid, Saulnier, Nicole, Mehta, Sanjay C
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Sprache:eng
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creator Shoudy, Matthew T
Brew, Kevin W
Ok, Injo
Saraf, Iqbal Rashid
Saulnier, Nicole
Mehta, Sanjay C
description A phase change memory structure including a bottom electrode; a top electrode; a first phase change material between the bottom electrode and the top electrode; a first dielectric surrounding the first phase change material; a second dielectric surrounding the top electrode, the second dielectric having selective adhesion to a metal as compared to the first phase change material; a first metal feature contacting the bottom electrode; and a second metal feature contacting the top electrode.
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title SELECTIVE ENCAPSULATION OF MEMRISTIVE ELEMENT
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