HERMETIC SEAL FOR TRANSISTORS WITH METAL ON BOTH SIDES

Embodiments described herein may be related to apparatuses, processes, and techniques for providing a hermetic seal for a layer of transistors with metal on both sides that are on a substrate. The layer of transistors may be within a die or within a portion of a die. The hermetic seal may include a...

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Hauptverfasser:	KABIR, Mohammad Enamul, ZAWADZKI, Keith, GREVE, Hannes, PULS, Conor P, RAHMAN, Tofizur
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	KABIR, Mohammad Enamul ZAWADZKI, Keith GREVE, Hannes PULS, Conor P RAHMAN, Tofizur
description	Embodiments described herein may be related to apparatuses, processes, and techniques for providing a hermetic seal for a layer of transistors with metal on both sides that are on a substrate. The layer of transistors may be within a die or within a portion of a die. The hermetic seal may include a hermetic layer on one side of the layer of transistors and a hermetic layer on the opposite side of the transistors. In embodiments, one or more metal walls may be constructed through the transistor layer, with metal rings placed around either side of the layer of transistors and hermetically coupling with the two hermetic layers. Other embodiments may be described and/or claimed.
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	HERMETIC SEAL FOR TRANSISTORS WITH METAL ON BOTH SIDES
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