SUBSTRATE TREATING APPARATUS AND METHOD THEREOF

Provided are a substrate treating apparatus and a method thereof that can improve pattern roughness when an etching process is performed for a substrate. The substrate treating method comprises: inserting a substrate into a substrate treating apparatus; injecting a first process gas into the substra...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: JANG, Woo Seok, CHOI, Min Jung, YOU, Ban Seok, TAK, Ki Duk
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:Provided are a substrate treating apparatus and a method thereof that can improve pattern roughness when an etching process is performed for a substrate. The substrate treating method comprises: inserting a substrate into a substrate treating apparatus; injecting a first process gas into the substrate treating apparatus and treating the substrate to a first plasma using the first process gas; and injecting a second process gas into the substrate treating apparatus and treating the substrate to a second plasma using the second process gas, wherein at least some components of the second process gas differ from those of the first process gas.