MICROELECTRONIC DEVICES INCLUDING STACK STRUCTURES HAVING AIR GAPS, AND RELATED MEMORY DEVICES, ELECTRONIC SYSTEMS, AND METHODS

MICROELECTRONIC DEVICES INCLUDING STACK STRUCTURES HAVING AIR GAPS, AND RELATED MEMORY DEVICES, ELECTRONIC SYSTEMS, AND METHODS

A microelectronic device comprises a stack structure, a staircase structure, an etch stop material, and insulative material. The stack structure comprises conductive structures, and air gaps vertically alternating with the conductive structures. The staircase structure is within the stack structure...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Surthi, Shyam, Kim, Byeung Chul
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
INFORMATION STORAGE
PHYSICS
SEMICONDUCTOR DEVICES
STATIC STORES
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Beschreibung
Zusammenfassung:A microelectronic device comprises a stack structure, a staircase structure, an etch stop material, and insulative material. The stack structure comprises conductive structures, and air gaps vertically alternating with the conductive structures. The staircase structure is within the stack structure and has steps comprising edges of at least some of the conductive structures of the stack structure. The etch stop material continuously extends over the conductive structures and at least partially defines horizontal boundaries of the air gaps. The insulative material overlies the etch stop material. Additional microelectronic devices, memory devices, electronic systems, and methods are also disclosed.