SEMICONDUCTOR DEVICE
Provided is a technology capable of initializing data in memory cells at a relatively high speed while suppressing an area increase. Based on a fact that the reset signal is turned to a high level, a control circuit of a semiconductor device turns a first transistor to an OFF state, a plurality of w...
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| creator | SATOU, Kouji NAGATA, Shunya |
| description | Provided is a technology capable of initializing data in memory cells at a relatively high speed while suppressing an area increase. Based on a fact that the reset signal is turned to a high level, a control circuit of a semiconductor device turns a first transistor to an OFF state, a plurality of word lines to a selection state, a precharge circuit to the OFF state, column switches for writing to an ON state, and column switches for reading to the OFF state, causes write circuits to turn first bit lines and second bit lines to a low level and a high level, respectively, and initializes a plurality of memory cells. |
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Based on a fact that the reset signal is turned to a high level, a control circuit of a semiconductor device turns a first transistor to an OFF state, a plurality of word lines to a selection state, a precharge circuit to the OFF state, column switches for writing to an ON state, and column switches for reading to the OFF state, causes write circuits to turn first bit lines and second bit lines to a low level and a high level, respectively, and initializes a plurality of memory cells.</description><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAJdvX1dPb3cwl1DvEPUnBxDfN0duVhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGRsaGFmaWFoaOhsbEqQIA_ogfrg</recordid><startdate>20230615</startdate><enddate>20230615</enddate><creator>SATOU, Kouji</creator><creator>NAGATA, Shunya</creator><scope>EVB</scope></search><sort><creationdate>20230615</creationdate><title>SEMICONDUCTOR DEVICE</title><author>SATOU, Kouji ; NAGATA, Shunya</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2023186981A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>SATOU, Kouji</creatorcontrib><creatorcontrib>NAGATA, Shunya</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SATOU, Kouji</au><au>NAGATA, Shunya</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE</title><date>2023-06-15</date><risdate>2023</risdate><abstract>Provided is a technology capable of initializing data in memory cells at a relatively high speed while suppressing an area increase. Based on a fact that the reset signal is turned to a high level, a control circuit of a semiconductor device turns a first transistor to an OFF state, a plurality of word lines to a selection state, a precharge circuit to the OFF state, column switches for writing to an ON state, and column switches for reading to the OFF state, causes write circuits to turn first bit lines and second bit lines to a low level and a high level, respectively, and initializes a plurality of memory cells.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | INFORMATION STORAGE PHYSICS STATIC STORES |
| title | SEMICONDUCTOR DEVICE |
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