ALUMINUM NITRIDE CRYSTALS HAVING LOW URBACH ENERGY AND HIGH TRANSPARENCY TO DEEP-ULTRAVIOLET WAVELENGTHS

In various embodiments, single-crystal aluminum nitride boules and substrates have low Urbach energies and/or absorption coefficients at deep-ultraviolet wavelengths. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting d...

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Hauptverfasser:	SCHOWALTER, Leo J, KIMURA, Toru, YAMAOKA, Keisuke, WANG, Shichao, MIEBACH, Thomas, BONDOKOV, Robert T, CHEN, Jianfeng, GRANDUSKY, James R
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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creator	SCHOWALTER, Leo J KIMURA, Toru YAMAOKA, Keisuke WANG, Shichao MIEBACH, Thomas BONDOKOV, Robert T CHEN, Jianfeng GRANDUSKY, James R
description	In various embodiments, single-crystal aluminum nitride boules and substrates have low Urbach energies and/or absorption coefficients at deep-ultraviolet wavelengths. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers.
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fullrecord	<record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2023183883A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2023183883A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2023183883A13</originalsourceid><addsrcrecordid>eNqNyr0KwjAUQOEuDqK-wwXngm2Wrtf0mgTS25Kflk6lSMRBtFDfHx18AKcDH2eb3dHGxnBsgE1wpiaQbvQBrQeNvWEFth0gujNKDcTk1AjINWijNASH7Dt0xHKE0EJN1OXRfrk3raUAA_ZkiVXQfp9tbvNjTYdfd9nxQkHqPC2vKa3LfE3P9J6iL0-lKCpRVQIL8d_1ATDtNwc</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>ALUMINUM NITRIDE CRYSTALS HAVING LOW URBACH ENERGY AND HIGH TRANSPARENCY TO DEEP-ULTRAVIOLET WAVELENGTHS</title><source>esp@cenet</source><creator>SCHOWALTER, Leo J ; KIMURA, Toru ; YAMAOKA, Keisuke ; WANG, Shichao ; MIEBACH, Thomas ; BONDOKOV, Robert T ; CHEN, Jianfeng ; GRANDUSKY, James R</creator><creatorcontrib>SCHOWALTER, Leo J ; KIMURA, Toru ; YAMAOKA, Keisuke ; WANG, Shichao ; MIEBACH, Thomas ; BONDOKOV, Robert T ; CHEN, Jianfeng ; GRANDUSKY, James R</creatorcontrib><description>In various embodiments, single-crystal aluminum nitride boules and substrates have low Urbach energies and/or absorption coefficients at deep-ultraviolet wavelengths. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers.</description><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; CRYSTAL GROWTH ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230615&DB=EPODOC&CC=US&NR=2023183883A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230615&DB=EPODOC&CC=US&NR=2023183883A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>SCHOWALTER, Leo J</creatorcontrib><creatorcontrib>KIMURA, Toru</creatorcontrib><creatorcontrib>YAMAOKA, Keisuke</creatorcontrib><creatorcontrib>WANG, Shichao</creatorcontrib><creatorcontrib>MIEBACH, Thomas</creatorcontrib><creatorcontrib>BONDOKOV, Robert T</creatorcontrib><creatorcontrib>CHEN, Jianfeng</creatorcontrib><creatorcontrib>GRANDUSKY, James R</creatorcontrib><title>ALUMINUM NITRIDE CRYSTALS HAVING LOW URBACH ENERGY AND HIGH TRANSPARENCY TO DEEP-ULTRAVIOLET WAVELENGTHS</title><description>In various embodiments, single-crystal aluminum nitride boules and substrates have low Urbach energies and/or absorption coefficients at deep-ultraviolet wavelengths. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers.</description><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</subject><subject>APPARATUS THEREFOR</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>CRYSTAL GROWTH</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>METALLURGY</subject><subject>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>REFINING BY ZONE-MELTING OF MATERIAL</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</subject><subject>SINGLE-CRYSTAL-GROWTH</subject><subject>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNyr0KwjAUQOEuDqK-wwXngm2Wrtf0mgTS25Kflk6lSMRBtFDfHx18AKcDH2eb3dHGxnBsgE1wpiaQbvQBrQeNvWEFth0gujNKDcTk1AjINWijNASH7Dt0xHKE0EJN1OXRfrk3raUAA_ZkiVXQfp9tbvNjTYdfd9nxQkHqPC2vKa3LfE3P9J6iL0-lKCpRVQIL8d_1ATDtNwc</recordid><startdate>20230615</startdate><enddate>20230615</enddate><creator>SCHOWALTER, Leo J</creator><creator>KIMURA, Toru</creator><creator>YAMAOKA, Keisuke</creator><creator>WANG, Shichao</creator><creator>MIEBACH, Thomas</creator><creator>BONDOKOV, Robert T</creator><creator>CHEN, Jianfeng</creator><creator>GRANDUSKY, James R</creator><scope>EVB</scope></search><sort><creationdate>20230615</creationdate><title>ALUMINUM NITRIDE CRYSTALS HAVING LOW URBACH ENERGY AND HIGH TRANSPARENCY TO DEEP-ULTRAVIOLET WAVELENGTHS</title><author>SCHOWALTER, Leo J ; KIMURA, Toru ; YAMAOKA, Keisuke ; WANG, Shichao ; MIEBACH, Thomas ; BONDOKOV, Robert T ; CHEN, Jianfeng ; GRANDUSKY, James R</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2023183883A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE</topic><topic>APPARATUS THEREFOR</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>CRYSTAL GROWTH</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>METALLURGY</topic><topic>PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>REFINING BY ZONE-MELTING OF MATERIAL</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE</topic><topic>SINGLE-CRYSTAL-GROWTH</topic><topic>UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</topic><toplevel>online_resources</toplevel><creatorcontrib>SCHOWALTER, Leo J</creatorcontrib><creatorcontrib>KIMURA, Toru</creatorcontrib><creatorcontrib>YAMAOKA, Keisuke</creatorcontrib><creatorcontrib>WANG, Shichao</creatorcontrib><creatorcontrib>MIEBACH, Thomas</creatorcontrib><creatorcontrib>BONDOKOV, Robert T</creatorcontrib><creatorcontrib>CHEN, Jianfeng</creatorcontrib><creatorcontrib>GRANDUSKY, James R</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>SCHOWALTER, Leo J</au><au>KIMURA, Toru</au><au>YAMAOKA, Keisuke</au><au>WANG, Shichao</au><au>MIEBACH, Thomas</au><au>BONDOKOV, Robert T</au><au>CHEN, Jianfeng</au><au>GRANDUSKY, James R</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>ALUMINUM NITRIDE CRYSTALS HAVING LOW URBACH ENERGY AND HIGH TRANSPARENCY TO DEEP-ULTRAVIOLET WAVELENGTHS</title><date>2023-06-15</date><risdate>2023</risdate><abstract>In various embodiments, single-crystal aluminum nitride boules and substrates have low Urbach energies and/or absorption coefficients at deep-ultraviolet wavelengths. The single-crystal aluminum nitride may function as a platform for the fabrication of light-emitting devices such as light-emitting diodes and lasers.</abstract><oa>free_for_read</oa></addata></record>
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subjects	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
title	ALUMINUM NITRIDE CRYSTALS HAVING LOW URBACH ENERGY AND HIGH TRANSPARENCY TO DEEP-ULTRAVIOLET WAVELENGTHS
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