SEQUENTIAL INFILTRATION SYNTHESIS APPARATUS
Examples of the disclosure relate to a sequential infiltration synthesis apparatus comprising:a reaction chamber constructed and arranged to accommodate at least one substrate;a first precursor flow path to provide the first precursor to the reaction chamber when a first flow controller is activated...
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| creator | Raaijmakers, Ivo Johannes Maes, Jan Willem Kachel, Krzysztof Kamil Knaepen, Werner |
| description | Examples of the disclosure relate to a sequential infiltration synthesis apparatus comprising:a reaction chamber constructed and arranged to accommodate at least one substrate;a first precursor flow path to provide the first precursor to the reaction chamber when a first flow controller is activated;a second precursor flow path to provide a second precursor to the reaction chamber when a second flow controller is activated;a removal flow path to allow removal of gas from the reaction chamber;a removal flow controller to create a gas flow in the reaction chamber to the removal flow pathwhen the removal flow controller is activated; and,a sequence controller operably connected to the first, second and removal flow controllers and the sequence controller being programmed to enable infiltration of an infiltrateable material provided on the substrate in the reaction chamber. The apparatus may be provided with a heating system. |
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The apparatus may be provided with a heating system.</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; CINEMATOGRAPHY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; ELECTROGRAPHY ; HOLOGRAPHY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; MATERIALS THEREFOR ; METALLURGY ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; SEMICONDUCTOR DEVICES ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230615&DB=EPODOC&CC=US&NR=2023183856A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230615&DB=EPODOC&CC=US&NR=2023183856A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Raaijmakers, Ivo Johannes</creatorcontrib><creatorcontrib>Maes, Jan Willem</creatorcontrib><creatorcontrib>Kachel, Krzysztof Kamil</creatorcontrib><creatorcontrib>Knaepen, Werner</creatorcontrib><title>SEQUENTIAL INFILTRATION SYNTHESIS APPARATUS</title><description>Examples of the disclosure relate to a sequential infiltration synthesis apparatus comprising:a reaction chamber constructed and arranged to accommodate at least one substrate;a first precursor flow path to provide the first precursor to the reaction chamber when a first flow controller is activated;a second precursor flow path to provide a second precursor to the reaction chamber when a second flow controller is activated;a removal flow path to allow removal of gas from the reaction chamber;a removal flow controller to create a gas flow in the reaction chamber to the removal flow pathwhen the removal flow controller is activated; and,a sequence controller operably connected to the first, second and removal flow controllers and the sequence controller being programmed to enable infiltration of an infiltrateable material provided on the substrate in the reaction chamber. 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and,a sequence controller operably connected to the first, second and removal flow controllers and the sequence controller being programmed to enable infiltration of an infiltrateable material provided on the substrate in the reaction chamber. The apparatus may be provided with a heating system.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY CINEMATOGRAPHY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL MATERIALS THEREFOR METALLURGY ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
| title | SEQUENTIAL INFILTRATION SYNTHESIS APPARATUS |
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