METHOD OF FORMING SILICIDE FILM

A method of forming a silicide film including: disposing a semiconductor wafer containing silicon as a constituent element in a sputtering chamber; evacuating an inside of the sputtering chamber until a pressure reaches 9×10−5 Pa or less; introducing a sputtering gas into the sputtering chamber and...

Ausführliche Beschreibung

Bibliographische Detailangaben

1. Verfasser:	OBA, Taku
Format:	Patent
Sprache:	eng
Schlagworte:	CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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