METHOD OF FORMING SILICIDE FILM

METHOD OF FORMING SILICIDE FILM

A method of forming a silicide film including: disposing a semiconductor wafer containing silicon as a constituent element in a sputtering chamber; evacuating an inside of the sputtering chamber until a pressure reaches 9×10−5 Pa or less; introducing a sputtering gas into the sputtering chamber and...

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1. Verfasser: OBA, Taku
Format: Patent
Sprache:eng
Schlagworte:
CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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creator OBA, Taku
description A method of forming a silicide film including: disposing a semiconductor wafer containing silicon as a constituent element in a sputtering chamber; evacuating an inside of the sputtering chamber until a pressure reaches 9×10−5 Pa or less; introducing a sputtering gas into the sputtering chamber and sputtering a target in the sputtering chamber to deposit a metal film on the semiconductor wafer; and causing a laser beam to be incident into the metal film deposited on the semiconductor wafer to form a metal silicide film by a silicide reaction.
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subjects CHEMICAL SURFACE TREATMENT
CHEMISTRY
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
COATING MATERIAL WITH METALLIC MATERIAL
COATING METALLIC MATERIAL
DIFFUSION TREATMENT OF METALLIC MATERIAL
INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL
METALLURGY
SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
title METHOD OF FORMING SILICIDE FILM
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