VARIABLE RESISTANCE MEMORY DEVICE

A variable resistance memory device includes a substrate, a first conductive line on the substrate, the first conductive line extending in a first horizontal direction, a second conductive line extending on the first conductive line in a second horizontal direction perpendicular to the first horizon...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KIM, Taehyeong, YU, Minji, KIM, Taeguen, PARK, Jeonghee, WU, Zhe
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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