OPTOELECTRONIC SEMICONDUCTOR STRUCTURE

An optoelectronic semiconductor structure is revealed. The optoelectronic semiconductor structure includes a substrate, a first electrode, an electrode contact, a semiconductor layer, and a second electrode. After a photoactive layer of the semiconductor structure absorbs energy from a light source...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SUN, ZI-WAN, WU, JHAO-LIN, CHANG, YI-MING
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:An optoelectronic semiconductor structure is revealed. The optoelectronic semiconductor structure includes a substrate, a first electrode, an electrode contact, a semiconductor layer, and a second electrode. After a photoactive layer of the semiconductor structure absorbs energy from a light source to generate an exciton, the exciton dissociates into a first carrier and a second carrier. The first carrier is transferred to the first electrode through the first interface layer while the second carrier is transferred from the second electrode to the electrode contact directly by a tunneling effect.