METHOD FOR MANUFACTURING GATE OF NAND FLASH

The present application discloses a method for manufacturing a NAND flash, comprising: step 1, sequentially form a floating gate dielectric layer and a first polysilicon layer; step 2, sequentially forming an inter-gate dielectric layer and a second polysilicon layer, wherein a first doping concentr...

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Bibliographische Detailangaben

Hauptverfasser:	Xu, Pengkai, Qiao, Fulong
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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