REPLACEMENT CONDUCTIVE MATERIAL FOR INTERCONNECT FEATURES

REPLACEMENT CONDUCTIVE MATERIAL FOR INTERCONNECT FEATURES

An integrated circuit structure includes a first interconnect layer including a first dielectric material. The first dielectric material has a first recess therein, the first recess having a first opening. The integrated circuit structure further includes a second interconnect layer above the first...

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Hauptverfasser: Majhi, Prashant, Murthy, Anand
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Murthy, Anand
description An integrated circuit structure includes a first interconnect layer including a first dielectric material. The first dielectric material has a first recess therein, the first recess having a first opening. The integrated circuit structure further includes a second interconnect layer above the first interconnect layer. The second interconnect layer includes a second dielectric material that has a second recess therein. The second recess has a second opening. In an example, at least a portion of the first opening of the first recess abuts and overlaps with at least a portion of the second opening of the second recess. In an example, a continuous conformal layer is on walls of the first and second recesses, and a continuous body of conductive material is within the first and second recesses.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title REPLACEMENT CONDUCTIVE MATERIAL FOR INTERCONNECT FEATURES
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