MICROLENS STRUCTURES FOR SEMICONDUCTOR DEVICE WITH SINGLE-PHOTON AVALANCHE DIODE PIXELS

An imaging device may include a plurality of single-photon avalanche diode (SPAD) pixels. The SPAD pixels may be overlapped by microlenses to direct light incident on the pixels onto photosensitive regions of the pixels and a containment grid with openings that surround each of the microlenses. Duri...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	CHAPMAN, Nathan Wayne, SULFRIDGE, Marc Allen, BORTHAKUR, Swarnal
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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