SIDE-GATED SEMICONDUCTOR-SUPERCONDUCTOR HYBRID DEVICES

SIDE-GATED SEMICONDUCTOR-SUPERCONDUCTOR HYBRID DEVICES

One aspect provides semiconductor-superconductor hybrid device comprises a substrate, a first semiconductor component arranged on the substrate, a superconductor component arranged to be capable of energy level hybridisation with the first semiconductor component, and a second semiconductor componen...

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Hauptverfasser: VAN WOERKOM, David Johannes, QUINTERO PÉREZ, Marina, SINGH, Amrita, CHINNI, Vinay Kumar
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Sprache:eng
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ELECTRICITY
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creator VAN WOERKOM, David Johannes
QUINTERO PÉREZ, Marina
SINGH, Amrita
CHINNI, Vinay Kumar
description One aspect provides semiconductor-superconductor hybrid device comprises a substrate, a first semiconductor component arranged on the substrate, a superconductor component arranged to be capable of energy level hybridisation with the first semiconductor component, and a second semiconductor component arranged as a gate electrode for gating the first semiconductor component. Another aspect provides a semiconductor-superconductor hybrid device, comprising: a substrate; a semiconductor component arranged on the substrate; a gate electrode for gating the semiconductor component; and a superconductor component capable of undergoing energy level hybridisation with the semiconductor component; wherein the gate electrode is arranged in a channel in the substrate. Also provided are methods of fabricating the semiconductor-superconductor hybrid devices.
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title SIDE-GATED SEMICONDUCTOR-SUPERCONDUCTOR HYBRID DEVICES
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