SEMICONDUCTOR DEVICES HAVING ASYMMETRICAL STRUCTURES

SEMICONDUCTOR DEVICES HAVING ASYMMETRICAL STRUCTURES

A semiconductor device includes a substrate including first and second active regions extending in a first direction and isolated from direct contact with each other in the first direction; a device isolation layer between the first and second active regions in the substrate; and first and second ga...

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Hauptverfasser: Hur, Sunggi, Jung, Joohee, YOU, Junggun, Park, Sungil
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Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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creator Hur, Sunggi
Jung, Joohee
YOU, Junggun
Park, Sungil
description A semiconductor device includes a substrate including first and second active regions extending in a first direction and isolated from direct contact with each other in the first direction; a device isolation layer between the first and second active regions in the substrate; and first and second gate structures extending in a second direction on the substrate while respectively intersecting end portions of the first and second active regions. The first gate structure includes a first gate electrode. The second gate structure includes a second gate electrode. The first gate structure protrudes further toward the device isolation layer, as compared to the second gate structure, in a vertical direction that is perpendicular to the first and second directions, and a lower end of the first gate electrode is located on a lower height level than a lower end of the second gate electrode.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SEMICONDUCTOR DEVICES HAVING ASYMMETRICAL STRUCTURES
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