TICN Having Reduced Growth Defects by Means of HIPIMS

A method for applying a coating having at least one TiCN layer to a surface of a substrate to be coated by means of high power impulse magnetron sputtering (HIPIMS), wherein, to deposit the at least one TiCN layer, at least one Ti target is used as the Ti source for producing the TiCN layer, said ta...

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Bibliographische Detailangaben
Hauptverfasser: Krassnitzer, Siegfried, Kurapov, Denis
Format: Patent
Sprache:eng
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