PARTICLE SUPPRESSION METHOD
A particle suppression method includes a) supplying a first processing gas containing a halogen element and a metal element into a chamber in which a substrate is accommodated and plasmatizing the first processing gas to form a film containing the metal element on the substrate, b) reducing a surfac...
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creator | MATSUMOTO, Atsushi YAMASAKI, Hideaki DEMPOH, Kazuki KIM, Daeho |
description | A particle suppression method includes a) supplying a first processing gas containing a halogen element and a metal element into a chamber in which a substrate is accommodated and plasmatizing the first processing gas to form a film containing the metal element on the substrate, b) reducing a surface of a deposit formed on an inner wall of the chamber by supplying a second processing gas including hydrogen gas into the chamber and turning the second processing gas into plasma, and c) nitriding the reduced surface of the deposit by supplying a third processing gas containing a nitrogen element into the chamber. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2023124029A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2023124029A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2023124029A13</originalsourceid><addsrcrecordid>eNrjZJAOcAwK8XT2cVUIDg0ICHINDvb091PwdQ3x8HfhYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXxocFGBkbGhkYmBkaWjobGxKkCAO35Iag</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PARTICLE SUPPRESSION METHOD</title><source>esp@cenet</source><creator>MATSUMOTO, Atsushi ; YAMASAKI, Hideaki ; DEMPOH, Kazuki ; KIM, Daeho</creator><creatorcontrib>MATSUMOTO, Atsushi ; YAMASAKI, Hideaki ; DEMPOH, Kazuki ; KIM, Daeho</creatorcontrib><description>A particle suppression method includes a) supplying a first processing gas containing a halogen element and a metal element into a chamber in which a substrate is accommodated and plasmatizing the first processing gas to form a film containing the metal element on the substrate, b) reducing a surface of a deposit formed on an inner wall of the chamber by supplying a second processing gas including hydrogen gas into the chamber and turning the second processing gas into plasma, and c) nitriding the reduced surface of the deposit by supplying a third processing gas containing a nitrogen element into the chamber.</description><language>eng</language><subject>CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230420&DB=EPODOC&CC=US&NR=2023124029A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25555,76308</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230420&DB=EPODOC&CC=US&NR=2023124029A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MATSUMOTO, Atsushi</creatorcontrib><creatorcontrib>YAMASAKI, Hideaki</creatorcontrib><creatorcontrib>DEMPOH, Kazuki</creatorcontrib><creatorcontrib>KIM, Daeho</creatorcontrib><title>PARTICLE SUPPRESSION METHOD</title><description>A particle suppression method includes a) supplying a first processing gas containing a halogen element and a metal element into a chamber in which a substrate is accommodated and plasmatizing the first processing gas to form a film containing the metal element on the substrate, b) reducing a surface of a deposit formed on an inner wall of the chamber by supplying a second processing gas including hydrogen gas into the chamber and turning the second processing gas into plasma, and c) nitriding the reduced surface of the deposit by supplying a third processing gas containing a nitrogen element into the chamber.</description><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJAOcAwK8XT2cVUIDg0ICHINDvb091PwdQ3x8HfhYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXxocFGBkbGhkYmBkaWjobGxKkCAO35Iag</recordid><startdate>20230420</startdate><enddate>20230420</enddate><creator>MATSUMOTO, Atsushi</creator><creator>YAMASAKI, Hideaki</creator><creator>DEMPOH, Kazuki</creator><creator>KIM, Daeho</creator><scope>EVB</scope></search><sort><creationdate>20230420</creationdate><title>PARTICLE SUPPRESSION METHOD</title><author>MATSUMOTO, Atsushi ; YAMASAKI, Hideaki ; DEMPOH, Kazuki ; KIM, Daeho</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2023124029A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION</topic><toplevel>online_resources</toplevel><creatorcontrib>MATSUMOTO, Atsushi</creatorcontrib><creatorcontrib>YAMASAKI, Hideaki</creatorcontrib><creatorcontrib>DEMPOH, Kazuki</creatorcontrib><creatorcontrib>KIM, Daeho</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MATSUMOTO, Atsushi</au><au>YAMASAKI, Hideaki</au><au>DEMPOH, Kazuki</au><au>KIM, Daeho</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PARTICLE SUPPRESSION METHOD</title><date>2023-04-20</date><risdate>2023</risdate><abstract>A particle suppression method includes a) supplying a first processing gas containing a halogen element and a metal element into a chamber in which a substrate is accommodated and plasmatizing the first processing gas to form a film containing the metal element on the substrate, b) reducing a surface of a deposit formed on an inner wall of the chamber by supplying a second processing gas including hydrogen gas into the chamber and turning the second processing gas into plasma, and c) nitriding the reduced surface of the deposit by supplying a third processing gas containing a nitrogen element into the chamber.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION |
title | PARTICLE SUPPRESSION METHOD |
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