SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREFOR

A power module includes an insulating substrate, a heat dissipation member, and an electrode plate. An IGBT and a diode are mounted on the insulating substrate. The heat dissipation member is bonded to the insulating substrate by first solder. The electrode plate is disposed so as to overlap at leas...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: OGAWA, Michio, ISHIKAWA, Satoru, FUJINO, Junji, WADA, Fumio, KAWAZOE, Chika
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator OGAWA, Michio
ISHIKAWA, Satoru
FUJINO, Junji
WADA, Fumio
KAWAZOE, Chika
description A power module includes an insulating substrate, a heat dissipation member, and an electrode plate. An IGBT and a diode are mounted on the insulating substrate. The heat dissipation member is bonded to the insulating substrate by first solder. The electrode plate is disposed so as to overlap at least a part of the semiconductor element. The main surface of the insulating substrate is curved so as to have a shape convex toward the heat dissipation member. The first solder is thicker at the edges than at the center in a plan view. The semiconductor element is bonded to the electrode plate by second solder.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2023118890A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2023118890A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2023118890A13</originalsourceid><addsrcrecordid>eNrjZDAPdvX1dPb3cwl1DvEPUnBxDfN0dtVRcPRzUfB19At1c3QOCQ3y9HNX8HUN8fB3UQjxcA1ydfMP4mFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgZGxoaGFhaWBo6GxsSpAgDmJCk4</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREFOR</title><source>esp@cenet</source><creator>OGAWA, Michio ; ISHIKAWA, Satoru ; FUJINO, Junji ; WADA, Fumio ; KAWAZOE, Chika</creator><creatorcontrib>OGAWA, Michio ; ISHIKAWA, Satoru ; FUJINO, Junji ; WADA, Fumio ; KAWAZOE, Chika</creatorcontrib><description>A power module includes an insulating substrate, a heat dissipation member, and an electrode plate. An IGBT and a diode are mounted on the insulating substrate. The heat dissipation member is bonded to the insulating substrate by first solder. The electrode plate is disposed so as to overlap at least a part of the semiconductor element. The main surface of the insulating substrate is curved so as to have a shape convex toward the heat dissipation member. The first solder is thicker at the edges than at the center in a plan view. The semiconductor element is bonded to the electrode plate by second solder.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230420&amp;DB=EPODOC&amp;CC=US&amp;NR=2023118890A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230420&amp;DB=EPODOC&amp;CC=US&amp;NR=2023118890A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>OGAWA, Michio</creatorcontrib><creatorcontrib>ISHIKAWA, Satoru</creatorcontrib><creatorcontrib>FUJINO, Junji</creatorcontrib><creatorcontrib>WADA, Fumio</creatorcontrib><creatorcontrib>KAWAZOE, Chika</creatorcontrib><title>SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREFOR</title><description>A power module includes an insulating substrate, a heat dissipation member, and an electrode plate. An IGBT and a diode are mounted on the insulating substrate. The heat dissipation member is bonded to the insulating substrate by first solder. The electrode plate is disposed so as to overlap at least a part of the semiconductor element. The main surface of the insulating substrate is curved so as to have a shape convex toward the heat dissipation member. The first solder is thicker at the edges than at the center in a plan view. The semiconductor element is bonded to the electrode plate by second solder.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZDAPdvX1dPb3cwl1DvEPUnBxDfN0dtVRcPRzUfB19At1c3QOCQ3y9HNX8HUN8fB3UQjxcA1ydfMP4mFgTUvMKU7lhdLcDMpuriHOHrqpBfnxqcUFicmpeakl8aHBRgZGxoaGFhaWBo6GxsSpAgDmJCk4</recordid><startdate>20230420</startdate><enddate>20230420</enddate><creator>OGAWA, Michio</creator><creator>ISHIKAWA, Satoru</creator><creator>FUJINO, Junji</creator><creator>WADA, Fumio</creator><creator>KAWAZOE, Chika</creator><scope>EVB</scope></search><sort><creationdate>20230420</creationdate><title>SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREFOR</title><author>OGAWA, Michio ; ISHIKAWA, Satoru ; FUJINO, Junji ; WADA, Fumio ; KAWAZOE, Chika</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2023118890A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>OGAWA, Michio</creatorcontrib><creatorcontrib>ISHIKAWA, Satoru</creatorcontrib><creatorcontrib>FUJINO, Junji</creatorcontrib><creatorcontrib>WADA, Fumio</creatorcontrib><creatorcontrib>KAWAZOE, Chika</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>OGAWA, Michio</au><au>ISHIKAWA, Satoru</au><au>FUJINO, Junji</au><au>WADA, Fumio</au><au>KAWAZOE, Chika</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREFOR</title><date>2023-04-20</date><risdate>2023</risdate><abstract>A power module includes an insulating substrate, a heat dissipation member, and an electrode plate. An IGBT and a diode are mounted on the insulating substrate. The heat dissipation member is bonded to the insulating substrate by first solder. The electrode plate is disposed so as to overlap at least a part of the semiconductor element. The main surface of the insulating substrate is curved so as to have a shape convex toward the heat dissipation member. The first solder is thicker at the edges than at the center in a plan view. The semiconductor element is bonded to the electrode plate by second solder.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US2023118890A1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREFOR
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-03T20%3A19%3A12IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=OGAWA,%20Michio&rft.date=2023-04-20&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2023118890A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true