SEMICONDUCTOR DEVICES
A semiconductor device is provided. A semiconductor device includes: a first active pattern spaced apart from a substrate and extending in a first direction; a second active pattern spaced apart further from the substrate than the first active pattern and extending in the first direction; a gate str...
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| creator | Jang, Sung Uk Lee, Kong Soo Choi, Won Hee Shin, Dong Suk Kuh, Bong Jin |
| description | A semiconductor device is provided. A semiconductor device includes: a first active pattern spaced apart from a substrate and extending in a first direction; a second active pattern spaced apart further from the substrate than the first active pattern and extending in the first direction; a gate structure on the substrate, the gate structure extending in a second direction crossing the first direction and penetrating the first active pattern and the second active pattern; a first source/drain region on at least one side surface of the gate structure and connected to the first active pattern; a second source/drain region on at least one side surface of the gate structure and connected to the second active pattern; and a buffer layer between the substrate and the first active pattern, the buffer layer containing germanium. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2023116342A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2023116342A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2023116342A13</originalsourceid><addsrcrecordid>eNrjZBANdvX1dPb3cwl1DvEPUnBxDfN0dg3mYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXxocFGBkbGhoZmxiZGjobGxKkCAB_FH-I</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR DEVICES</title><source>esp@cenet</source><creator>Jang, Sung Uk ; Lee, Kong Soo ; Choi, Won Hee ; Shin, Dong Suk ; Kuh, Bong Jin</creator><creatorcontrib>Jang, Sung Uk ; Lee, Kong Soo ; Choi, Won Hee ; Shin, Dong Suk ; Kuh, Bong Jin</creatorcontrib><description>A semiconductor device is provided. A semiconductor device includes: a first active pattern spaced apart from a substrate and extending in a first direction; a second active pattern spaced apart further from the substrate than the first active pattern and extending in the first direction; a gate structure on the substrate, the gate structure extending in a second direction crossing the first direction and penetrating the first active pattern and the second active pattern; a first source/drain region on at least one side surface of the gate structure and connected to the first active pattern; a second source/drain region on at least one side surface of the gate structure and connected to the second active pattern; and a buffer layer between the substrate and the first active pattern, the buffer layer containing germanium.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230413&DB=EPODOC&CC=US&NR=2023116342A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,309,782,887,25573,76557</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230413&DB=EPODOC&CC=US&NR=2023116342A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Jang, Sung Uk</creatorcontrib><creatorcontrib>Lee, Kong Soo</creatorcontrib><creatorcontrib>Choi, Won Hee</creatorcontrib><creatorcontrib>Shin, Dong Suk</creatorcontrib><creatorcontrib>Kuh, Bong Jin</creatorcontrib><title>SEMICONDUCTOR DEVICES</title><description>A semiconductor device is provided. A semiconductor device includes: a first active pattern spaced apart from a substrate and extending in a first direction; a second active pattern spaced apart further from the substrate than the first active pattern and extending in the first direction; a gate structure on the substrate, the gate structure extending in a second direction crossing the first direction and penetrating the first active pattern and the second active pattern; a first source/drain region on at least one side surface of the gate structure and connected to the first active pattern; a second source/drain region on at least one side surface of the gate structure and connected to the second active pattern; and a buffer layer between the substrate and the first active pattern, the buffer layer containing germanium.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBANdvX1dPb3cwl1DvEPUnBxDfN0dg3mYWBNS8wpTuWF0twMym6uIc4euqkF-fGpxQWJyal5qSXxocFGBkbGhoZmxiZGjobGxKkCAB_FH-I</recordid><startdate>20230413</startdate><enddate>20230413</enddate><creator>Jang, Sung Uk</creator><creator>Lee, Kong Soo</creator><creator>Choi, Won Hee</creator><creator>Shin, Dong Suk</creator><creator>Kuh, Bong Jin</creator><scope>EVB</scope></search><sort><creationdate>20230413</creationdate><title>SEMICONDUCTOR DEVICES</title><author>Jang, Sung Uk ; Lee, Kong Soo ; Choi, Won Hee ; Shin, Dong Suk ; Kuh, Bong Jin</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2023116342A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Jang, Sung Uk</creatorcontrib><creatorcontrib>Lee, Kong Soo</creatorcontrib><creatorcontrib>Choi, Won Hee</creatorcontrib><creatorcontrib>Shin, Dong Suk</creatorcontrib><creatorcontrib>Kuh, Bong Jin</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Jang, Sung Uk</au><au>Lee, Kong Soo</au><au>Choi, Won Hee</au><au>Shin, Dong Suk</au><au>Kuh, Bong Jin</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICES</title><date>2023-04-13</date><risdate>2023</risdate><abstract>A semiconductor device is provided. A semiconductor device includes: a first active pattern spaced apart from a substrate and extending in a first direction; a second active pattern spaced apart further from the substrate than the first active pattern and extending in the first direction; a gate structure on the substrate, the gate structure extending in a second direction crossing the first direction and penetrating the first active pattern and the second active pattern; a first source/drain region on at least one side surface of the gate structure and connected to the first active pattern; a second source/drain region on at least one side surface of the gate structure and connected to the second active pattern; and a buffer layer between the substrate and the first active pattern, the buffer layer containing germanium.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | SEMICONDUCTOR DEVICES |
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