CONFIGURABLE RESISTIVITY FOR LINES IN A MEMORY DEVICE

Methods, systems, and devices supporting configurable resistivities for lines in a memory device, such as access lines in a memory array are described. For example, metal lines at different levels of a memory device may be oxidized to different extents in order for the lines at different levels of t...

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Bibliographische Detailangaben

Hauptverfasser:	O'Toole, Michael P, Banerjee, Koushik, Cassel, Robert, Gyan, Isaiah O, Jiao, Jian, Johnson, Jason R, Cooper, William L
Format:	Patent
Sprache:	eng
Schlagworte:	INFORMATION STORAGE PHYSICS STATIC STORES
Online-Zugang:	Volltext bestellen
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