DYNAMIC PROCESSING CHAMBER BAFFLE

DYNAMIC PROCESSING CHAMBER BAFFLE

Exemplary methods of semiconductor processing may include delivering a deposition precursor into a processing region of a semiconductor processing chamber. The methods may include depositing a layer of material on a substrate housed in the processing region of the semiconductor processing chamber. T...

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Hauptverfasser: Kotagi, Udit S, Kulkarni, Mayur Govind
Format: Patent
Sprache:eng
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BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
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creator Kotagi, Udit S
Kulkarni, Mayur Govind
description Exemplary methods of semiconductor processing may include delivering a deposition precursor into a processing region of a semiconductor processing chamber. The methods may include depositing a layer of material on a substrate housed in the processing region of the semiconductor processing chamber. The processing region may be maintained at a first pressure during the deposition. The methods may include extending a baffle within the processing region. The baffle may modify a flow path within the processing region. The methods may include forming a plasma of a treatment or etch precursor within the processing region of the semiconductor processing chamber. The processing region may be maintained at a second pressure during the forming. The methods may include treating the layer of material deposited on the substrate with plasma effluents of the treatment precursor. The processes may be cycled any number of times.
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRICITY
title DYNAMIC PROCESSING CHAMBER BAFFLE
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