GLASS SUBSTRATES HAVING TRANSVERSE CAPACITORS FOR USE WITH SEMICONDUCTOR PACKAGES AND RELATED METHODS
Glass substrates having transverse capacitors for use with semiconductor packages and related methods are disclosed. An example semiconductor package includes a glass substrate having a through glass via between a first surface and a second surface opposite the first surface. A transverse capacitor...
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creator | Grujicic, Darko Kandanur, Sashi S Wall, Marcel A Aleksov, Aleksandar De La Torre, Helme Castro Darmawikarta, Kristof Shanmugam, Rengarajan Pietambaram, Srinivas V Nad, Suddhasattwa Duong, Benjamin T Sounart, Thomas I |
description | Glass substrates having transverse capacitors for use with semiconductor packages and related methods are disclosed. An example semiconductor package includes a glass substrate having a through glass via between a first surface and a second surface opposite the first surface. A transverse capacitor is located in the through glass via. The transverse capacitor includes a dielectric material positioned in a first portion of the through glass via, a first barrier/seed layer positioned in a second portion of the through glass via, and a first conductive material positioned in a third portion of the through glass via. |
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An example semiconductor package includes a glass substrate having a through glass via between a first surface and a second surface opposite the first surface. A transverse capacitor is located in the through glass via. The transverse capacitor includes a dielectric material positioned in a first portion of the through glass via, a first barrier/seed layer positioned in a second portion of the through glass via, and a first conductive material positioned in a third portion of the through glass via.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CAPACITORS ; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230330&DB=EPODOC&CC=US&NR=2023095846A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230330&DB=EPODOC&CC=US&NR=2023095846A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Grujicic, Darko</creatorcontrib><creatorcontrib>Kandanur, Sashi S</creatorcontrib><creatorcontrib>Wall, Marcel A</creatorcontrib><creatorcontrib>Aleksov, Aleksandar</creatorcontrib><creatorcontrib>De La Torre, Helme Castro</creatorcontrib><creatorcontrib>Darmawikarta, Kristof</creatorcontrib><creatorcontrib>Shanmugam, Rengarajan</creatorcontrib><creatorcontrib>Pietambaram, Srinivas V</creatorcontrib><creatorcontrib>Nad, Suddhasattwa</creatorcontrib><creatorcontrib>Duong, Benjamin T</creatorcontrib><creatorcontrib>Sounart, Thomas I</creatorcontrib><title>GLASS SUBSTRATES HAVING TRANSVERSE CAPACITORS FOR USE WITH SEMICONDUCTOR PACKAGES AND RELATED METHODS</title><description>Glass substrates having transverse capacitors for use with semiconductor packages and related methods are disclosed. An example semiconductor package includes a glass substrate having a through glass via between a first surface and a second surface opposite the first surface. A transverse capacitor is located in the through glass via. The transverse capacitor includes a dielectric material positioned in a first portion of the through glass via, a first barrier/seed layer positioned in a second portion of the through glass via, and a first conductive material positioned in a third portion of the through glass via.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CAPACITORS</subject><subject>CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjMEKwjAQRHvxIOo_LHgWaquixzXZNsE2kWxSj6VIPIkW6v9jDn6Ap2FmHm-exbpBZuBwZu_QE4PCTpsaUjPckWMCgVcU2lvHUFkHIU037RUwtVpYI4NIHyTmgnUSoJHgqEkyCS15ZSUvs9ljeE5x9ctFtq7IC7WJ47uP0zjc4yt--sBFXpT5aX_cHXBb_kd9AZYmNiE</recordid><startdate>20230330</startdate><enddate>20230330</enddate><creator>Grujicic, Darko</creator><creator>Kandanur, Sashi S</creator><creator>Wall, Marcel A</creator><creator>Aleksov, Aleksandar</creator><creator>De La Torre, Helme Castro</creator><creator>Darmawikarta, Kristof</creator><creator>Shanmugam, Rengarajan</creator><creator>Pietambaram, Srinivas V</creator><creator>Nad, Suddhasattwa</creator><creator>Duong, Benjamin T</creator><creator>Sounart, Thomas I</creator><scope>EVB</scope></search><sort><creationdate>20230330</creationdate><title>GLASS SUBSTRATES HAVING TRANSVERSE CAPACITORS FOR USE WITH SEMICONDUCTOR PACKAGES AND RELATED METHODS</title><author>Grujicic, Darko ; Kandanur, Sashi S ; Wall, Marcel A ; Aleksov, Aleksandar ; De La Torre, Helme Castro ; Darmawikarta, Kristof ; Shanmugam, Rengarajan ; Pietambaram, Srinivas V ; Nad, Suddhasattwa ; Duong, Benjamin T ; Sounart, Thomas I</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2023095846A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CAPACITORS</topic><topic>CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Grujicic, Darko</creatorcontrib><creatorcontrib>Kandanur, Sashi S</creatorcontrib><creatorcontrib>Wall, Marcel A</creatorcontrib><creatorcontrib>Aleksov, Aleksandar</creatorcontrib><creatorcontrib>De La Torre, Helme Castro</creatorcontrib><creatorcontrib>Darmawikarta, Kristof</creatorcontrib><creatorcontrib>Shanmugam, Rengarajan</creatorcontrib><creatorcontrib>Pietambaram, Srinivas V</creatorcontrib><creatorcontrib>Nad, Suddhasattwa</creatorcontrib><creatorcontrib>Duong, Benjamin T</creatorcontrib><creatorcontrib>Sounart, Thomas I</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Grujicic, Darko</au><au>Kandanur, Sashi S</au><au>Wall, Marcel A</au><au>Aleksov, Aleksandar</au><au>De La Torre, Helme Castro</au><au>Darmawikarta, Kristof</au><au>Shanmugam, Rengarajan</au><au>Pietambaram, Srinivas V</au><au>Nad, Suddhasattwa</au><au>Duong, Benjamin T</au><au>Sounart, Thomas I</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>GLASS SUBSTRATES HAVING TRANSVERSE CAPACITORS FOR USE WITH SEMICONDUCTOR PACKAGES AND RELATED METHODS</title><date>2023-03-30</date><risdate>2023</risdate><abstract>Glass substrates having transverse capacitors for use with semiconductor packages and related methods are disclosed. An example semiconductor package includes a glass substrate having a through glass via between a first surface and a second surface opposite the first surface. A transverse capacitor is located in the through glass via. The transverse capacitor includes a dielectric material positioned in a first portion of the through glass via, a first barrier/seed layer positioned in a second portion of the through glass via, and a first conductive material positioned in a third portion of the through glass via.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | BASIC ELECTRIC ELEMENTS CAPACITORS CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | GLASS SUBSTRATES HAVING TRANSVERSE CAPACITORS FOR USE WITH SEMICONDUCTOR PACKAGES AND RELATED METHODS |
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