GLASS SUBSTRATES HAVING TRANSVERSE CAPACITORS FOR USE WITH SEMICONDUCTOR PACKAGES AND RELATED METHODS

Glass substrates having transverse capacitors for use with semiconductor packages and related methods are disclosed. An example semiconductor package includes a glass substrate having a through glass via between a first surface and a second surface opposite the first surface. A transverse capacitor...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Grujicic, Darko, Kandanur, Sashi S, Wall, Marcel A, Aleksov, Aleksandar, De La Torre, Helme Castro, Darmawikarta, Kristof, Shanmugam, Rengarajan, Pietambaram, Srinivas V, Nad, Suddhasattwa, Duong, Benjamin T, Sounart, Thomas I
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator Grujicic, Darko
Kandanur, Sashi S
Wall, Marcel A
Aleksov, Aleksandar
De La Torre, Helme Castro
Darmawikarta, Kristof
Shanmugam, Rengarajan
Pietambaram, Srinivas V
Nad, Suddhasattwa
Duong, Benjamin T
Sounart, Thomas I
description Glass substrates having transverse capacitors for use with semiconductor packages and related methods are disclosed. An example semiconductor package includes a glass substrate having a through glass via between a first surface and a second surface opposite the first surface. A transverse capacitor is located in the through glass via. The transverse capacitor includes a dielectric material positioned in a first portion of the through glass via, a first barrier/seed layer positioned in a second portion of the through glass via, and a first conductive material positioned in a third portion of the through glass via.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2023095846A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2023095846A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2023095846A13</originalsourceid><addsrcrecordid>eNqNjMEKwjAQRHvxIOo_LHgWaquixzXZNsE2kWxSj6VIPIkW6v9jDn6Ap2FmHm-exbpBZuBwZu_QE4PCTpsaUjPckWMCgVcU2lvHUFkHIU037RUwtVpYI4NIHyTmgnUSoJHgqEkyCS15ZSUvs9ljeE5x9ctFtq7IC7WJ47uP0zjc4yt--sBFXpT5aX_cHXBb_kd9AZYmNiE</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>GLASS SUBSTRATES HAVING TRANSVERSE CAPACITORS FOR USE WITH SEMICONDUCTOR PACKAGES AND RELATED METHODS</title><source>esp@cenet</source><creator>Grujicic, Darko ; Kandanur, Sashi S ; Wall, Marcel A ; Aleksov, Aleksandar ; De La Torre, Helme Castro ; Darmawikarta, Kristof ; Shanmugam, Rengarajan ; Pietambaram, Srinivas V ; Nad, Suddhasattwa ; Duong, Benjamin T ; Sounart, Thomas I</creator><creatorcontrib>Grujicic, Darko ; Kandanur, Sashi S ; Wall, Marcel A ; Aleksov, Aleksandar ; De La Torre, Helme Castro ; Darmawikarta, Kristof ; Shanmugam, Rengarajan ; Pietambaram, Srinivas V ; Nad, Suddhasattwa ; Duong, Benjamin T ; Sounart, Thomas I</creatorcontrib><description>Glass substrates having transverse capacitors for use with semiconductor packages and related methods are disclosed. An example semiconductor package includes a glass substrate having a through glass via between a first surface and a second surface opposite the first surface. A transverse capacitor is located in the through glass via. The transverse capacitor includes a dielectric material positioned in a first portion of the through glass via, a first barrier/seed layer positioned in a second portion of the through glass via, and a first conductive material positioned in a third portion of the through glass via.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CAPACITORS ; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230330&amp;DB=EPODOC&amp;CC=US&amp;NR=2023095846A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76516</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230330&amp;DB=EPODOC&amp;CC=US&amp;NR=2023095846A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Grujicic, Darko</creatorcontrib><creatorcontrib>Kandanur, Sashi S</creatorcontrib><creatorcontrib>Wall, Marcel A</creatorcontrib><creatorcontrib>Aleksov, Aleksandar</creatorcontrib><creatorcontrib>De La Torre, Helme Castro</creatorcontrib><creatorcontrib>Darmawikarta, Kristof</creatorcontrib><creatorcontrib>Shanmugam, Rengarajan</creatorcontrib><creatorcontrib>Pietambaram, Srinivas V</creatorcontrib><creatorcontrib>Nad, Suddhasattwa</creatorcontrib><creatorcontrib>Duong, Benjamin T</creatorcontrib><creatorcontrib>Sounart, Thomas I</creatorcontrib><title>GLASS SUBSTRATES HAVING TRANSVERSE CAPACITORS FOR USE WITH SEMICONDUCTOR PACKAGES AND RELATED METHODS</title><description>Glass substrates having transverse capacitors for use with semiconductor packages and related methods are disclosed. An example semiconductor package includes a glass substrate having a through glass via between a first surface and a second surface opposite the first surface. A transverse capacitor is located in the through glass via. The transverse capacitor includes a dielectric material positioned in a first portion of the through glass via, a first barrier/seed layer positioned in a second portion of the through glass via, and a first conductive material positioned in a third portion of the through glass via.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CAPACITORS</subject><subject>CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjMEKwjAQRHvxIOo_LHgWaquixzXZNsE2kWxSj6VIPIkW6v9jDn6Ap2FmHm-exbpBZuBwZu_QE4PCTpsaUjPckWMCgVcU2lvHUFkHIU037RUwtVpYI4NIHyTmgnUSoJHgqEkyCS15ZSUvs9ljeE5x9ctFtq7IC7WJ47uP0zjc4yt--sBFXpT5aX_cHXBb_kd9AZYmNiE</recordid><startdate>20230330</startdate><enddate>20230330</enddate><creator>Grujicic, Darko</creator><creator>Kandanur, Sashi S</creator><creator>Wall, Marcel A</creator><creator>Aleksov, Aleksandar</creator><creator>De La Torre, Helme Castro</creator><creator>Darmawikarta, Kristof</creator><creator>Shanmugam, Rengarajan</creator><creator>Pietambaram, Srinivas V</creator><creator>Nad, Suddhasattwa</creator><creator>Duong, Benjamin T</creator><creator>Sounart, Thomas I</creator><scope>EVB</scope></search><sort><creationdate>20230330</creationdate><title>GLASS SUBSTRATES HAVING TRANSVERSE CAPACITORS FOR USE WITH SEMICONDUCTOR PACKAGES AND RELATED METHODS</title><author>Grujicic, Darko ; Kandanur, Sashi S ; Wall, Marcel A ; Aleksov, Aleksandar ; De La Torre, Helme Castro ; Darmawikarta, Kristof ; Shanmugam, Rengarajan ; Pietambaram, Srinivas V ; Nad, Suddhasattwa ; Duong, Benjamin T ; Sounart, Thomas I</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2023095846A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CAPACITORS</topic><topic>CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>Grujicic, Darko</creatorcontrib><creatorcontrib>Kandanur, Sashi S</creatorcontrib><creatorcontrib>Wall, Marcel A</creatorcontrib><creatorcontrib>Aleksov, Aleksandar</creatorcontrib><creatorcontrib>De La Torre, Helme Castro</creatorcontrib><creatorcontrib>Darmawikarta, Kristof</creatorcontrib><creatorcontrib>Shanmugam, Rengarajan</creatorcontrib><creatorcontrib>Pietambaram, Srinivas V</creatorcontrib><creatorcontrib>Nad, Suddhasattwa</creatorcontrib><creatorcontrib>Duong, Benjamin T</creatorcontrib><creatorcontrib>Sounart, Thomas I</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Grujicic, Darko</au><au>Kandanur, Sashi S</au><au>Wall, Marcel A</au><au>Aleksov, Aleksandar</au><au>De La Torre, Helme Castro</au><au>Darmawikarta, Kristof</au><au>Shanmugam, Rengarajan</au><au>Pietambaram, Srinivas V</au><au>Nad, Suddhasattwa</au><au>Duong, Benjamin T</au><au>Sounart, Thomas I</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>GLASS SUBSTRATES HAVING TRANSVERSE CAPACITORS FOR USE WITH SEMICONDUCTOR PACKAGES AND RELATED METHODS</title><date>2023-03-30</date><risdate>2023</risdate><abstract>Glass substrates having transverse capacitors for use with semiconductor packages and related methods are disclosed. An example semiconductor package includes a glass substrate having a through glass via between a first surface and a second surface opposite the first surface. A transverse capacitor is located in the through glass via. The transverse capacitor includes a dielectric material positioned in a first portion of the through glass via, a first barrier/seed layer positioned in a second portion of the through glass via, and a first conductive material positioned in a third portion of the through glass via.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US2023095846A1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
CAPACITORS
CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES ORLIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title GLASS SUBSTRATES HAVING TRANSVERSE CAPACITORS FOR USE WITH SEMICONDUCTOR PACKAGES AND RELATED METHODS
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-19T20%3A19%3A44IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Grujicic,%20Darko&rft.date=2023-03-30&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2023095846A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true