SILICA-BASED SLURRY COMPOSITIONS CONTAINING HIGH MOLECULAR WEIGHT POLYMERS FOR USE IN CMP OF DIELECTRICS
The invention provides a chemical-mechanical polishing composition comprising: (a) about 3.0 wt. % to about 10 wt. % silica abrasive; (b) an anionic polymer having a weight average molecular weight of about 400 kDa to about 7000 kDa; and (c) water, wherein the polishing composition has a viscosity o...
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| creator | NAIK, Sajo KNAPTON, Elliot BROSNAN, Sarah JOHNSON, Brittany LU, Lung-Tai ROBELLO, Douglas REISS, Brian LONG, Kim |
| description | The invention provides a chemical-mechanical polishing composition comprising: (a) about 3.0 wt. % to about 10 wt. % silica abrasive; (b) an anionic polymer having a weight average molecular weight of about 400 kDa to about 7000 kDa; and (c) water, wherein the polishing composition has a viscosity of at least about 1 cPs, a ratio of viscosity (cPs) to wt. % of silica abrasive of about 0.2 cPs/wt. % to about 1.5 cPs/wt. %, and a pH of about 9 to about 12. The invention additional provides a chemical-mechanical polishing composition comprising: (a) about 3.0 wt. % to about 10 wt. % silica abrasive; (b) a nonionicpolymer having a weight average molecular weight of about 300 kDa to about 7000 kDa; and (c) water, wherein the polishing composition has a viscosity of at least about 2 cPs, and a pH of about 9 to about 12. The invention also provides a method of chemically-mechanically polishing a substrate, especially a substrate comprising silicon oxide, silicon nitride, polysilicon, or combinations thereof, using said compositions. |
| format | Patent |
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The invention additional provides a chemical-mechanical polishing composition comprising: (a) about 3.0 wt. % to about 10 wt. % silica abrasive; (b) a nonionicpolymer having a weight average molecular weight of about 300 kDa to about 7000 kDa; and (c) water, wherein the polishing composition has a viscosity of at least about 2 cPs, and a pH of about 9 to about 12. The invention also provides a method of chemically-mechanically polishing a substrate, especially a substrate comprising silicon oxide, silicon nitride, polysilicon, or combinations thereof, using said compositions.</description><language>eng</language><subject>ADHESIVES ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; DYES ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; METALLURGY ; MISCELLANEOUS APPLICATIONS OF MATERIALS ; MISCELLANEOUS COMPOSITIONS ; NATURAL RESINS ; PAINTS ; POLISHES ; POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH ; SEMICONDUCTOR DEVICES ; SKI WAXES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230323&DB=EPODOC&CC=US&NR=2023087984A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25562,76317</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230323&DB=EPODOC&CC=US&NR=2023087984A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NAIK, Sajo</creatorcontrib><creatorcontrib>KNAPTON, Elliot</creatorcontrib><creatorcontrib>BROSNAN, Sarah</creatorcontrib><creatorcontrib>JOHNSON, Brittany</creatorcontrib><creatorcontrib>LU, Lung-Tai</creatorcontrib><creatorcontrib>ROBELLO, Douglas</creatorcontrib><creatorcontrib>REISS, Brian</creatorcontrib><creatorcontrib>LONG, Kim</creatorcontrib><title>SILICA-BASED SLURRY COMPOSITIONS CONTAINING HIGH MOLECULAR WEIGHT POLYMERS FOR USE IN CMP OF DIELECTRICS</title><description>The invention provides a chemical-mechanical polishing composition comprising: (a) about 3.0 wt. % to about 10 wt. % silica abrasive; (b) an anionic polymer having a weight average molecular weight of about 400 kDa to about 7000 kDa; and (c) water, wherein the polishing composition has a viscosity of at least about 1 cPs, a ratio of viscosity (cPs) to wt. % of silica abrasive of about 0.2 cPs/wt. % to about 1.5 cPs/wt. %, and a pH of about 9 to about 12. The invention additional provides a chemical-mechanical polishing composition comprising: (a) about 3.0 wt. % to about 10 wt. % silica abrasive; (b) a nonionicpolymer having a weight average molecular weight of about 300 kDa to about 7000 kDa; and (c) water, wherein the polishing composition has a viscosity of at least about 2 cPs, and a pH of about 9 to about 12. The invention also provides a method of chemically-mechanically polishing a substrate, especially a substrate comprising silicon oxide, silicon nitride, polysilicon, or combinations thereof, using said compositions.</description><subject>ADHESIVES</subject><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMISTRY</subject><subject>DYES</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>METALLURGY</subject><subject>MISCELLANEOUS APPLICATIONS OF MATERIALS</subject><subject>MISCELLANEOUS COMPOSITIONS</subject><subject>NATURAL RESINS</subject><subject>PAINTS</subject><subject>POLISHES</subject><subject>POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SKI WAXES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNys0KgkAUQGE3LaJ6hwutBdMgW07jVS_Mj8ydIVyJxESLKMHen1z0AK0OH5x18mBSJEV6EYwVsArO9SCt7iyTJ2t4gfGCDJkGWmpa0FahDEo4uOJiD51VvUbHUFsHgRHIgNQd2BoqwmX2jiRvk9V9fM5x9-sm2dfoZZvG6T3EeRpv8RU_Q-A8y4usPJ3LozgU_11fIFw2zg</recordid><startdate>20230323</startdate><enddate>20230323</enddate><creator>NAIK, Sajo</creator><creator>KNAPTON, Elliot</creator><creator>BROSNAN, Sarah</creator><creator>JOHNSON, Brittany</creator><creator>LU, Lung-Tai</creator><creator>ROBELLO, Douglas</creator><creator>REISS, Brian</creator><creator>LONG, Kim</creator><scope>EVB</scope></search><sort><creationdate>20230323</creationdate><title>SILICA-BASED SLURRY COMPOSITIONS CONTAINING HIGH MOLECULAR WEIGHT POLYMERS FOR USE IN CMP OF DIELECTRICS</title><author>NAIK, Sajo ; KNAPTON, Elliot ; BROSNAN, Sarah ; JOHNSON, Brittany ; LU, Lung-Tai ; ROBELLO, Douglas ; REISS, Brian ; LONG, Kim</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2023087984A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>ADHESIVES</topic><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMISTRY</topic><topic>DYES</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>METALLURGY</topic><topic>MISCELLANEOUS APPLICATIONS OF MATERIALS</topic><topic>MISCELLANEOUS COMPOSITIONS</topic><topic>NATURAL RESINS</topic><topic>PAINTS</topic><topic>POLISHES</topic><topic>POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SKI WAXES</topic><toplevel>online_resources</toplevel><creatorcontrib>NAIK, Sajo</creatorcontrib><creatorcontrib>KNAPTON, Elliot</creatorcontrib><creatorcontrib>BROSNAN, Sarah</creatorcontrib><creatorcontrib>JOHNSON, Brittany</creatorcontrib><creatorcontrib>LU, Lung-Tai</creatorcontrib><creatorcontrib>ROBELLO, Douglas</creatorcontrib><creatorcontrib>REISS, Brian</creatorcontrib><creatorcontrib>LONG, Kim</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NAIK, Sajo</au><au>KNAPTON, Elliot</au><au>BROSNAN, Sarah</au><au>JOHNSON, Brittany</au><au>LU, Lung-Tai</au><au>ROBELLO, Douglas</au><au>REISS, Brian</au><au>LONG, Kim</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SILICA-BASED SLURRY COMPOSITIONS CONTAINING HIGH MOLECULAR WEIGHT POLYMERS FOR USE IN CMP OF DIELECTRICS</title><date>2023-03-23</date><risdate>2023</risdate><abstract>The invention provides a chemical-mechanical polishing composition comprising: (a) about 3.0 wt. % to about 10 wt. % silica abrasive; (b) an anionic polymer having a weight average molecular weight of about 400 kDa to about 7000 kDa; and (c) water, wherein the polishing composition has a viscosity of at least about 1 cPs, a ratio of viscosity (cPs) to wt. % of silica abrasive of about 0.2 cPs/wt. % to about 1.5 cPs/wt. %, and a pH of about 9 to about 12. The invention additional provides a chemical-mechanical polishing composition comprising: (a) about 3.0 wt. % to about 10 wt. % silica abrasive; (b) a nonionicpolymer having a weight average molecular weight of about 300 kDa to about 7000 kDa; and (c) water, wherein the polishing composition has a viscosity of at least about 2 cPs, and a pH of about 9 to about 12. The invention also provides a method of chemically-mechanically polishing a substrate, especially a substrate comprising silicon oxide, silicon nitride, polysilicon, or combinations thereof, using said compositions.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | ADHESIVES BASIC ELECTRIC ELEMENTS CHEMISTRY DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SEMICONDUCTOR DEVICES SKI WAXES |
| title | SILICA-BASED SLURRY COMPOSITIONS CONTAINING HIGH MOLECULAR WEIGHT POLYMERS FOR USE IN CMP OF DIELECTRICS |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-13T17%3A59%3A08IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=NAIK,%20Sajo&rft.date=2023-03-23&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2023087984A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |