SEMICONDUCTOR DEVICE
A semiconductor device includes: a first electrode; a first semiconductor layer; a first insulating film extending downward from an upper surface of the first semiconductor layer, the first insulating film being columnar; a second electrode located in the first insulating film, the second electrode...
Gespeichert in:
| Hauptverfasser: | , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | NISHIWAKI, Tatsuya KACHI, Tsuyoshi TOKUYAMA, Shuhei |
| description | A semiconductor device includes: a first electrode; a first semiconductor layer; a first insulating film extending downward from an upper surface of the first semiconductor layer, the first insulating film being columnar; a second electrode located in the first insulating film, the second electrode extending in a vertical direction, the second electrode being columnar; a second semiconductor layer partially provided in an upper layer portion of the first semiconductor layer, the second semiconductor layer being next to the first insulating film with the first semiconductor layer interposed; a third semiconductor layer partially provided in an upper layer portion of the second semiconductor layer; and a third electrode located higher than the upper surface of the first semiconductor layer, the third electrode overlapping a portion of the first insulating film, a portion of the first semiconductor layer, and a portion of the second semiconductor layer when viewed from above. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2023087505A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2023087505A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2023087505A13</originalsourceid><addsrcrecordid>eNrjZBAJdvX1dPb3cwl1DvEPUnBxDfN0duVhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGRsYGFuamBqaOhsbEqQIA_PQfng</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR DEVICE</title><source>esp@cenet</source><creator>NISHIWAKI, Tatsuya ; KACHI, Tsuyoshi ; TOKUYAMA, Shuhei</creator><creatorcontrib>NISHIWAKI, Tatsuya ; KACHI, Tsuyoshi ; TOKUYAMA, Shuhei</creatorcontrib><description>A semiconductor device includes: a first electrode; a first semiconductor layer; a first insulating film extending downward from an upper surface of the first semiconductor layer, the first insulating film being columnar; a second electrode located in the first insulating film, the second electrode extending in a vertical direction, the second electrode being columnar; a second semiconductor layer partially provided in an upper layer portion of the first semiconductor layer, the second semiconductor layer being next to the first insulating film with the first semiconductor layer interposed; a third semiconductor layer partially provided in an upper layer portion of the second semiconductor layer; and a third electrode located higher than the upper surface of the first semiconductor layer, the third electrode overlapping a portion of the first insulating film, a portion of the first semiconductor layer, and a portion of the second semiconductor layer when viewed from above.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230323&DB=EPODOC&CC=US&NR=2023087505A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230323&DB=EPODOC&CC=US&NR=2023087505A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NISHIWAKI, Tatsuya</creatorcontrib><creatorcontrib>KACHI, Tsuyoshi</creatorcontrib><creatorcontrib>TOKUYAMA, Shuhei</creatorcontrib><title>SEMICONDUCTOR DEVICE</title><description>A semiconductor device includes: a first electrode; a first semiconductor layer; a first insulating film extending downward from an upper surface of the first semiconductor layer, the first insulating film being columnar; a second electrode located in the first insulating film, the second electrode extending in a vertical direction, the second electrode being columnar; a second semiconductor layer partially provided in an upper layer portion of the first semiconductor layer, the second semiconductor layer being next to the first insulating film with the first semiconductor layer interposed; a third semiconductor layer partially provided in an upper layer portion of the second semiconductor layer; and a third electrode located higher than the upper surface of the first semiconductor layer, the third electrode overlapping a portion of the first insulating film, a portion of the first semiconductor layer, and a portion of the second semiconductor layer when viewed from above.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZBAJdvX1dPb3cwl1DvEPUnBxDfN0duVhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGRsYGFuamBqaOhsbEqQIA_PQfng</recordid><startdate>20230323</startdate><enddate>20230323</enddate><creator>NISHIWAKI, Tatsuya</creator><creator>KACHI, Tsuyoshi</creator><creator>TOKUYAMA, Shuhei</creator><scope>EVB</scope></search><sort><creationdate>20230323</creationdate><title>SEMICONDUCTOR DEVICE</title><author>NISHIWAKI, Tatsuya ; KACHI, Tsuyoshi ; TOKUYAMA, Shuhei</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2023087505A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>NISHIWAKI, Tatsuya</creatorcontrib><creatorcontrib>KACHI, Tsuyoshi</creatorcontrib><creatorcontrib>TOKUYAMA, Shuhei</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>NISHIWAKI, Tatsuya</au><au>KACHI, Tsuyoshi</au><au>TOKUYAMA, Shuhei</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR DEVICE</title><date>2023-03-23</date><risdate>2023</risdate><abstract>A semiconductor device includes: a first electrode; a first semiconductor layer; a first insulating film extending downward from an upper surface of the first semiconductor layer, the first insulating film being columnar; a second electrode located in the first insulating film, the second electrode extending in a vertical direction, the second electrode being columnar; a second semiconductor layer partially provided in an upper layer portion of the first semiconductor layer, the second semiconductor layer being next to the first insulating film with the first semiconductor layer interposed; a third semiconductor layer partially provided in an upper layer portion of the second semiconductor layer; and a third electrode located higher than the upper surface of the first semiconductor layer, the third electrode overlapping a portion of the first insulating film, a portion of the first semiconductor layer, and a portion of the second semiconductor layer when viewed from above.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_US2023087505A1 |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | SEMICONDUCTOR DEVICE |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-26T17%3A40%3A24IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=NISHIWAKI,%20Tatsuya&rft.date=2023-03-23&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2023087505A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |