SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

A semiconductor device includes first and second sheet patterns spaced apart from each other on a first region of the substrate, a first gate electrode extending between the first and second sheet patterns, third and fourth sheet patterns spaced apart from each other on a second region of the substr...

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Bibliographische Detailangaben
Hauptverfasser: LIM, Wang Seop, CHOI, Kyu Bong, PARK, Yeon Ho, PARK, Jun Mo, PARK, Eun Sil, LEE, Jin Seok
Format: Patent
Sprache:eng
Schlagworte:
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