ULTRAHIGH SELECTIVE NITRIDE ETCH TO FORM FINFET DEVICES

A substrate processing system for selectively etching a layer on a substrate includes an upper chamber region, an inductive coil arranged around the upper chamber region and a lower chamber region including a substrate support to support a substrate. A gas distribution device is arranged between the...

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Bibliographische Detailangaben

Hauptverfasser:	Yang, Dengliang, Zhu, Ji, Park, Pilyeon, Chang, Hsiao-Eei, EASON, Kwame, Angelov, Ivelin, Park, Joon Hong, Kawaguchi, Mark, Yaqoob, Faisal
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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