MANUFACTURING METHOD AND INSPECTION METHOD OF SEMICONDUCTOR DEVICE
Provided is a manufacturing method of a semiconductor device having a semiconductor substrate. The manufacturing method includes forming an interlayer insulating film above the semiconductor substrate; forming a metal electrode above the interlayer insulating film; acquiring an image of the metal el...
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| creator | TSUJI, Taketo MIYAZAKI, Masayuki TERAKAWA, Makoto HATA, Kensuke MIMURA, Tomohiro |
| description | Provided is a manufacturing method of a semiconductor device having a semiconductor substrate. The manufacturing method includes forming an interlayer insulating film above the semiconductor substrate; forming a metal electrode above the interlayer insulating film; acquiring an image of the metal electrode and detecting defect candidates on a surface of the metal electrode based on the image; and performing inspection by determining a quality of the semiconductor device, based on height information of each of the detected defect candidates in a direction perpendicular to the surface of the metal electrode. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2023074595A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2023074595A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2023074595A13</originalsourceid><addsrcrecordid>eNrjZHDydfQLdXN0DgkN8vRzV_B1DfHwd1Fw9HNR8PQLDnB1DvH094OJ-rspBLv6ejr7-7mEOof4Bym4uIZ5OrvyMLCmJeYUp_JCaW4GZTfXEGcP3dSC_PjU4oLE5NS81JL40GAjAyNjA3MTU0tTR0Nj4lQBAMIWLFA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>MANUFACTURING METHOD AND INSPECTION METHOD OF SEMICONDUCTOR DEVICE</title><source>esp@cenet</source><creator>TSUJI, Taketo ; MIYAZAKI, Masayuki ; TERAKAWA, Makoto ; HATA, Kensuke ; MIMURA, Tomohiro</creator><creatorcontrib>TSUJI, Taketo ; MIYAZAKI, Masayuki ; TERAKAWA, Makoto ; HATA, Kensuke ; MIMURA, Tomohiro</creatorcontrib><description>Provided is a manufacturing method of a semiconductor device having a semiconductor substrate. The manufacturing method includes forming an interlayer insulating film above the semiconductor substrate; forming a metal electrode above the interlayer insulating film; acquiring an image of the metal electrode and detecting defect candidates on a surface of the metal electrode based on the image; and performing inspection by determining a quality of the semiconductor device, based on height information of each of the detected defect candidates in a direction perpendicular to the surface of the metal electrode.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES ; MEASURING ; PHYSICS ; SEMICONDUCTOR DEVICES ; TESTING</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230309&DB=EPODOC&CC=US&NR=2023074595A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76418</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230309&DB=EPODOC&CC=US&NR=2023074595A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TSUJI, Taketo</creatorcontrib><creatorcontrib>MIYAZAKI, Masayuki</creatorcontrib><creatorcontrib>TERAKAWA, Makoto</creatorcontrib><creatorcontrib>HATA, Kensuke</creatorcontrib><creatorcontrib>MIMURA, Tomohiro</creatorcontrib><title>MANUFACTURING METHOD AND INSPECTION METHOD OF SEMICONDUCTOR DEVICE</title><description>Provided is a manufacturing method of a semiconductor device having a semiconductor substrate. The manufacturing method includes forming an interlayer insulating film above the semiconductor substrate; forming a metal electrode above the interlayer insulating film; acquiring an image of the metal electrode and detecting defect candidates on a surface of the metal electrode based on the image; and performing inspection by determining a quality of the semiconductor device, based on height information of each of the detected defect candidates in a direction perpendicular to the surface of the metal electrode.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</subject><subject>MEASURING</subject><subject>PHYSICS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHDydfQLdXN0DgkN8vRzV_B1DfHwd1Fw9HNR8PQLDnB1DvH094OJ-rspBLv6ejr7-7mEOof4Bym4uIZ5OrvyMLCmJeYUp_JCaW4GZTfXEGcP3dSC_PjU4oLE5NS81JL40GAjAyNjA3MTU0tTR0Nj4lQBAMIWLFA</recordid><startdate>20230309</startdate><enddate>20230309</enddate><creator>TSUJI, Taketo</creator><creator>MIYAZAKI, Masayuki</creator><creator>TERAKAWA, Makoto</creator><creator>HATA, Kensuke</creator><creator>MIMURA, Tomohiro</creator><scope>EVB</scope></search><sort><creationdate>20230309</creationdate><title>MANUFACTURING METHOD AND INSPECTION METHOD OF SEMICONDUCTOR DEVICE</title><author>TSUJI, Taketo ; MIYAZAKI, Masayuki ; TERAKAWA, Makoto ; HATA, Kensuke ; MIMURA, Tomohiro</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2023074595A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES</topic><topic>MEASURING</topic><topic>PHYSICS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>TSUJI, Taketo</creatorcontrib><creatorcontrib>MIYAZAKI, Masayuki</creatorcontrib><creatorcontrib>TERAKAWA, Makoto</creatorcontrib><creatorcontrib>HATA, Kensuke</creatorcontrib><creatorcontrib>MIMURA, Tomohiro</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TSUJI, Taketo</au><au>MIYAZAKI, Masayuki</au><au>TERAKAWA, Makoto</au><au>HATA, Kensuke</au><au>MIMURA, Tomohiro</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MANUFACTURING METHOD AND INSPECTION METHOD OF SEMICONDUCTOR DEVICE</title><date>2023-03-09</date><risdate>2023</risdate><abstract>Provided is a manufacturing method of a semiconductor device having a semiconductor substrate. The manufacturing method includes forming an interlayer insulating film above the semiconductor substrate; forming a metal electrode above the interlayer insulating film; acquiring an image of the metal electrode and detecting defect candidates on a surface of the metal electrode based on the image; and performing inspection by determining a quality of the semiconductor device, based on height information of each of the detected defect candidates in a direction perpendicular to the surface of the metal electrode.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIRCHEMICAL OR PHYSICAL PROPERTIES MEASURING PHYSICS SEMICONDUCTOR DEVICES TESTING |
| title | MANUFACTURING METHOD AND INSPECTION METHOD OF SEMICONDUCTOR DEVICE |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-09T06%3A53%3A37IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=TSUJI,%20Taketo&rft.date=2023-03-09&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2023074595A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |