LIGHT EMITTING DIODE DEVICES WITH BONDING AND/OR OHMIC CONTACT-REFLECTIVE MATERIAL
A metal stack of layers contacting an N-type layer of a light emitting diode (LED) device comprises: an ohmic contact layer electrically contacting the N-type layer and having a work function value that is less than or equal to a work function value of the N-type layer; a reflective layer electrical...
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creator | Cen, Zhan Hong Ng, Wee-Hong Zhang, Wali Teo, Yeow Meng |
description | A metal stack of layers contacting an N-type layer of a light emitting diode (LED) device comprises: an ohmic contact layer electrically contacting the N-type layer and having a work function value that is less than or equal to a work function value of the N-type layer; a reflective layer electrically contacting the ohmic contact layer; a first material barrier layer electrically contacting the reflective layer; a current carrying layer electrically contacting the first material barrier layer; and a second material barrier layer electrically contacting the current carrying layer. LED devices incorporate the metal stack of layer as a bonding material and/or as an ohmic contact-reflective material. Methods of making and using the metal stacks and LED devices are also provided. |
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LED devices incorporate the metal stack of layer as a bonding material and/or as an ohmic contact-reflective material. 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subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
title | LIGHT EMITTING DIODE DEVICES WITH BONDING AND/OR OHMIC CONTACT-REFLECTIVE MATERIAL |
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