SEMICONDUCTOR DEVICE AND SEMICONDUCTOR MEMORY DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

A semiconductor device includes a substrate and an insulating film formed on the substrate, and an electrode layer comprising molybdenum, formed in contact with the insulating film. The electrode layer has a chlorine concentration gradient such that a first concentration of chlorine in a first porti...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Sakai, Ayaka, Fukumaki, Naomi, Beppu, Takayuki
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A semiconductor device includes a substrate and an insulating film formed on the substrate, and an electrode layer comprising molybdenum, formed in contact with the insulating film. The electrode layer has a chlorine concentration gradient such that a first concentration of chlorine in a first portion of the electrode layer closer to the insulating layer is higher than a second concentration of chlorine in a second portion of the electrode layer less closer to the insulating layer.