SEMICONDUCTOR DEVICES HAVING GATE STRUCTURES

A semiconductor device includes first to fourth gate structures sequentially disposed in a first horizontal direction. Each of the first to fourth gate structures includes a gate electrode and a gate capping layer and first to third source/drain regions disposed among the first to fourth gate struct...

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Bibliographische Detailangaben
Hauptverfasser: PARK, JUHUN, BAE, DEOKHAN, HONG, SOOYEON, LEE, YURI, JUNG, YOONYOUNG
Format: Patent
Sprache:eng
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