SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
A silicon carbide epitaxial substrate according to a present disclosure includes a silicon carbide substrate and a silicon carbide epitaxial layer disposed on the silicon carbide substrate. The silicon carbide epitaxial layer includes a boundary surface in contact with the silicon carbide substrate...
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| creator | NISHIGUCHI, Taro ITOH, Hironori SAKURADA, Takashi |
| description | A silicon carbide epitaxial substrate according to a present disclosure includes a silicon carbide substrate and a silicon carbide epitaxial layer disposed on the silicon carbide substrate. The silicon carbide epitaxial layer includes a boundary surface in contact with the silicon carbide substrate and a main surface opposite to the boundary surface. The main surface has an outer circumferential edge, an outer circumferential region extending within 5 mm from the outer circumferential edge, and a central region surrounded by the outer circumferential region. When an area density of double Shockley stacking faults in the outer circumferential region is defined as a first area density, and an area density of double Shockley stacking faults in the central region is defined as a second area density, the first area density is five or more times as large as the second area density, the second area density is 0.2 cm−2 or more. |
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When an area density of double Shockley stacking faults in the outer circumferential region is defined as a first area density, and an area density of double Shockley stacking faults in the central region is defined as a second area density, the first area density is five or more times as large as the second area density, the second area density is 0.2 cm−2 or more.</description><language>eng</language><subject>AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE ; APPARATUS THEREFOR ; BASIC ELECTRIC ELEMENTS ; CHEMISTRY ; CRYSTAL GROWTH ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; METALLURGY ; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; REFINING BY ZONE-MELTING OF MATERIAL ; SEMICONDUCTOR DEVICES ; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE ; SINGLE-CRYSTAL-GROWTH ; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230223&DB=EPODOC&CC=US&NR=2023059737A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25551,76302</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230223&DB=EPODOC&CC=US&NR=2023059737A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>NISHIGUCHI, Taro</creatorcontrib><creatorcontrib>ITOH, Hironori</creatorcontrib><creatorcontrib>SAKURADA, Takashi</creatorcontrib><title>SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE</title><description>A silicon carbide epitaxial substrate according to a present disclosure includes a silicon carbide substrate and a silicon carbide epitaxial layer disposed on the silicon carbide substrate. 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| subjects | AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY CRYSTAL GROWTH ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY METALLURGY PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL SEMICONDUCTOR DEVICES SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL |
| title | SILICON CARBIDE EPITAXIAL SUBSTRATE AND METHOD OF MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE |
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