THERMAL CONDUCTION LAYER

THERMAL CONDUCTION LAYER

Embodiments of a present invention disclose an apparatus including a silicon wafer and a through-silicon-via (TSV) filled with a thermally conductive material located in the silicon wafer, wherein the thermally conductive material has better thermal conduction properties than the silicon wafer when...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: McVicker, Gerard, Sri-Jayantha, Sri M, Abraham, David
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Embodiments of a present invention disclose an apparatus including a silicon wafer and a through-silicon-via (TSV) filled with a thermally conductive material located in the silicon wafer, wherein the thermally conductive material has better thermal conduction properties than the silicon wafer when at cryogenic temperatures. A shunt layer connected to the thermal material in the TSV and a heat generating device located directly on top of the thermal material in the TSV and directly on top of the shunt layer, wherein the heat generated by the heat generating device is removed directly by the shunt layer and the thermal material in the TSV.