METHOD FOR MANUFACTURING RESISTIVE MEMORY CELLS

This method comprises the following steps:a) providing a stack successively comprising:a substrate;a first electrode;a first dielectric layer, having a first electrical strength;a second metal electrode;a second dielectric layer, having a second dielectric strength that is strictly less than the fir...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: CHARPIN-NICOLLE, Christelle, JALAGUIER, Eric, BLONKOWSKI, Serge, GUILLAUME, Nicolas
Format: Patent
Sprache:eng
Online-Zugang:Volltext bestellen
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