PLASMA PROCESSING APPARATUS AND ETCHING METHOD
A plasma processing apparatus comprising: a plasma processing chamber; a substrate support disposed in the plasma processing chamber, and including a lower electrode, an electrostatic chuck, and an edge ring disposed to surround a substrate mounted on the electrostatic chuck; a driving device; an up...
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| creator | TORII, Natsumi NAGAMI, Koichi |
| description | A plasma processing apparatus comprising: a plasma processing chamber; a substrate support disposed in the plasma processing chamber, and including a lower electrode, an electrostatic chuck, and an edge ring disposed to surround a substrate mounted on the electrostatic chuck; a driving device; an upper electrode disposed above the substrate support. In an example, the apparatus further comprises a source RF power supply; a bias RF power supply configured to supply bias RF power to the lower electrode; at least one conductor; a DC power supply; an RF filter electrically; and a controller configured to control the driving device and the at least one variable passive element, and adjust an incident angle of an ion in the plasma with respect to an edge area of the substrate mounted on the electrostatic chuck. |
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| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2023056323A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2023056323A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2023056323A13</originalsourceid><addsrcrecordid>eNrjZNAL8HEM9nVUCAjyd3YNDvb0c1dwDAhwDHIMCQ1WcPRzUXANcfYAifq6hnj4u_AwsKYl5hSn8kJpbgZlN5AK3dSC_PjU4oLE5NS81JL40GAjAyNjA1MzYyNjR0Nj4lQBAHspJp8</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>PLASMA PROCESSING APPARATUS AND ETCHING METHOD</title><source>esp@cenet</source><creator>TORII, Natsumi ; NAGAMI, Koichi</creator><creatorcontrib>TORII, Natsumi ; NAGAMI, Koichi</creatorcontrib><description>A plasma processing apparatus comprising: a plasma processing chamber; a substrate support disposed in the plasma processing chamber, and including a lower electrode, an electrostatic chuck, and an edge ring disposed to surround a substrate mounted on the electrostatic chuck; a driving device; an upper electrode disposed above the substrate support. In an example, the apparatus further comprises a source RF power supply; a bias RF power supply configured to supply bias RF power to the lower electrode; at least one conductor; a DC power supply; an RF filter electrically; and a controller configured to control the driving device and the at least one variable passive element, and adjust an incident angle of an ion in the plasma with respect to an edge area of the substrate mounted on the electrostatic chuck.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230223&DB=EPODOC&CC=US&NR=2023056323A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,778,883,25547,76298</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230223&DB=EPODOC&CC=US&NR=2023056323A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>TORII, Natsumi</creatorcontrib><creatorcontrib>NAGAMI, Koichi</creatorcontrib><title>PLASMA PROCESSING APPARATUS AND ETCHING METHOD</title><description>A plasma processing apparatus comprising: a plasma processing chamber; a substrate support disposed in the plasma processing chamber, and including a lower electrode, an electrostatic chuck, and an edge ring disposed to surround a substrate mounted on the electrostatic chuck; a driving device; an upper electrode disposed above the substrate support. In an example, the apparatus further comprises a source RF power supply; a bias RF power supply configured to supply bias RF power to the lower electrode; at least one conductor; a DC power supply; an RF filter electrically; and a controller configured to control the driving device and the at least one variable passive element, and adjust an incident angle of an ion in the plasma with respect to an edge area of the substrate mounted on the electrostatic chuck.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNAL8HEM9nVUCAjyd3YNDvb0c1dwDAhwDHIMCQ1WcPRzUXANcfYAifq6hnj4u_AwsKYl5hSn8kJpbgZlN5AK3dSC_PjU4oLE5NS81JL40GAjAyNjA1MzYyNjR0Nj4lQBAHspJp8</recordid><startdate>20230223</startdate><enddate>20230223</enddate><creator>TORII, Natsumi</creator><creator>NAGAMI, Koichi</creator><scope>EVB</scope></search><sort><creationdate>20230223</creationdate><title>PLASMA PROCESSING APPARATUS AND ETCHING METHOD</title><author>TORII, Natsumi ; NAGAMI, Koichi</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2023056323A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>TORII, Natsumi</creatorcontrib><creatorcontrib>NAGAMI, Koichi</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>TORII, Natsumi</au><au>NAGAMI, Koichi</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>PLASMA PROCESSING APPARATUS AND ETCHING METHOD</title><date>2023-02-23</date><risdate>2023</risdate><abstract>A plasma processing apparatus comprising: a plasma processing chamber; a substrate support disposed in the plasma processing chamber, and including a lower electrode, an electrostatic chuck, and an edge ring disposed to surround a substrate mounted on the electrostatic chuck; a driving device; an upper electrode disposed above the substrate support. In an example, the apparatus further comprises a source RF power supply; a bias RF power supply configured to supply bias RF power to the lower electrode; at least one conductor; a DC power supply; an RF filter electrically; and a controller configured to control the driving device and the at least one variable passive element, and adjust an incident angle of an ion in the plasma with respect to an edge area of the substrate mounted on the electrostatic chuck.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | PLASMA PROCESSING APPARATUS AND ETCHING METHOD |
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