CMP POLISHING LIQUID AND POLISHING METHOD
An aspect of the present disclosure provides a CMP polishing liquid containing: abrasive grains; and a cationic polymer, in which the cationic polymer has a main chain containing a nitrogen atom and a carbon atom and a hydroxyl group bonded to the carbon atom. The CMP polishing liquid may further co...
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creator | MINAMI, Hisataka KOBAYASHI, Shingo WU, Jenna TAKAHASHI, Hisato KOMINE, Mayumi OTSUKA, Yuya |
description | An aspect of the present disclosure provides a CMP polishing liquid containing: abrasive grains; and a cationic polymer, in which the cationic polymer has a main chain containing a nitrogen atom and a carbon atom and a hydroxyl group bonded to the carbon atom. The CMP polishing liquid may further contain at least one cyclic compound selected from the group consisting of an amino group-containing aromatic compound and a nitrogen-containing heterocyclic compound. Another aspect of the present disclosure provides a polishing method including a step of polishing a material to be polished by using this CMP polishing liquid. |
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fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2023054199A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2023054199A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2023054199A13</originalsourceid><addsrcrecordid>eNrjZNB09g1QCPD38Qz28PRzV_DxDAz1dFFw9HNBEvR1DfHwd-FhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGRsYGpiaGlpaOhsbEqQIAte4lQA</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>CMP POLISHING LIQUID AND POLISHING METHOD</title><source>esp@cenet</source><creator>MINAMI, Hisataka ; KOBAYASHI, Shingo ; WU, Jenna ; TAKAHASHI, Hisato ; KOMINE, Mayumi ; OTSUKA, Yuya</creator><creatorcontrib>MINAMI, Hisataka ; KOBAYASHI, Shingo ; WU, Jenna ; TAKAHASHI, Hisato ; KOMINE, Mayumi ; OTSUKA, Yuya</creatorcontrib><description>An aspect of the present disclosure provides a CMP polishing liquid containing: abrasive grains; and a cationic polymer, in which the cationic polymer has a main chain containing a nitrogen atom and a carbon atom and a hydroxyl group bonded to the carbon atom. The CMP polishing liquid may further contain at least one cyclic compound selected from the group consisting of an amino group-containing aromatic compound and a nitrogen-containing heterocyclic compound. Another aspect of the present disclosure provides a polishing method including a step of polishing a material to be polished by using this CMP polishing liquid.</description><language>eng</language><subject>ADHESIVES ; CHEMISTRY ; DYES ; METALLURGY ; MISCELLANEOUS APPLICATIONS OF MATERIALS ; MISCELLANEOUS COMPOSITIONS ; NATURAL RESINS ; PAINTS ; POLISHES ; POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH ; SKI WAXES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230223&DB=EPODOC&CC=US&NR=2023054199A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230223&DB=EPODOC&CC=US&NR=2023054199A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MINAMI, Hisataka</creatorcontrib><creatorcontrib>KOBAYASHI, Shingo</creatorcontrib><creatorcontrib>WU, Jenna</creatorcontrib><creatorcontrib>TAKAHASHI, Hisato</creatorcontrib><creatorcontrib>KOMINE, Mayumi</creatorcontrib><creatorcontrib>OTSUKA, Yuya</creatorcontrib><title>CMP POLISHING LIQUID AND POLISHING METHOD</title><description>An aspect of the present disclosure provides a CMP polishing liquid containing: abrasive grains; and a cationic polymer, in which the cationic polymer has a main chain containing a nitrogen atom and a carbon atom and a hydroxyl group bonded to the carbon atom. The CMP polishing liquid may further contain at least one cyclic compound selected from the group consisting of an amino group-containing aromatic compound and a nitrogen-containing heterocyclic compound. Another aspect of the present disclosure provides a polishing method including a step of polishing a material to be polished by using this CMP polishing liquid.</description><subject>ADHESIVES</subject><subject>CHEMISTRY</subject><subject>DYES</subject><subject>METALLURGY</subject><subject>MISCELLANEOUS APPLICATIONS OF MATERIALS</subject><subject>MISCELLANEOUS COMPOSITIONS</subject><subject>NATURAL RESINS</subject><subject>PAINTS</subject><subject>POLISHES</subject><subject>POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH</subject><subject>SKI WAXES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNB09g1QCPD38Qz28PRzV_DxDAz1dFFw9HNBEvR1DfHwd-FhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGRsYGpiaGlpaOhsbEqQIAte4lQA</recordid><startdate>20230223</startdate><enddate>20230223</enddate><creator>MINAMI, Hisataka</creator><creator>KOBAYASHI, Shingo</creator><creator>WU, Jenna</creator><creator>TAKAHASHI, Hisato</creator><creator>KOMINE, Mayumi</creator><creator>OTSUKA, Yuya</creator><scope>EVB</scope></search><sort><creationdate>20230223</creationdate><title>CMP POLISHING LIQUID AND POLISHING METHOD</title><author>MINAMI, Hisataka ; KOBAYASHI, Shingo ; WU, Jenna ; TAKAHASHI, Hisato ; KOMINE, Mayumi ; OTSUKA, Yuya</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2023054199A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>ADHESIVES</topic><topic>CHEMISTRY</topic><topic>DYES</topic><topic>METALLURGY</topic><topic>MISCELLANEOUS APPLICATIONS OF MATERIALS</topic><topic>MISCELLANEOUS COMPOSITIONS</topic><topic>NATURAL RESINS</topic><topic>PAINTS</topic><topic>POLISHES</topic><topic>POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH</topic><topic>SKI WAXES</topic><toplevel>online_resources</toplevel><creatorcontrib>MINAMI, Hisataka</creatorcontrib><creatorcontrib>KOBAYASHI, Shingo</creatorcontrib><creatorcontrib>WU, Jenna</creatorcontrib><creatorcontrib>TAKAHASHI, Hisato</creatorcontrib><creatorcontrib>KOMINE, Mayumi</creatorcontrib><creatorcontrib>OTSUKA, Yuya</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MINAMI, Hisataka</au><au>KOBAYASHI, Shingo</au><au>WU, Jenna</au><au>TAKAHASHI, Hisato</au><au>KOMINE, Mayumi</au><au>OTSUKA, Yuya</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>CMP POLISHING LIQUID AND POLISHING METHOD</title><date>2023-02-23</date><risdate>2023</risdate><abstract>An aspect of the present disclosure provides a CMP polishing liquid containing: abrasive grains; and a cationic polymer, in which the cationic polymer has a main chain containing a nitrogen atom and a carbon atom and a hydroxyl group bonded to the carbon atom. The CMP polishing liquid may further contain at least one cyclic compound selected from the group consisting of an amino group-containing aromatic compound and a nitrogen-containing heterocyclic compound. Another aspect of the present disclosure provides a polishing method including a step of polishing a material to be polished by using this CMP polishing liquid.</abstract><oa>free_for_read</oa></addata></record> |
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subjects | ADHESIVES CHEMISTRY DYES METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS POLISHES POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH SKI WAXES |
title | CMP POLISHING LIQUID AND POLISHING METHOD |
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