SINGLE POLY NON-VOLATILE MEMORY DEVICE AND MANUFACTURING METHOD THEREOF

A single poly non-volatile memory device is provided. The single poly non-volatile memory device is formed in a semiconductor substrate, and includes a sensing transistor, a selection transistor, and a capacitor, wherein a thickness of a selection gate insulating film is formed to be thicker than a...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	KIM, Su Jin, CHO, Min Kuck, JUNG, In Chul, LEE, Jung Hwan
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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