SEMICONDUCTOR LIGHT EMITTING DEVICE

A semiconductor light emitting device including a substrate; a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially stacked on the substrate; a transparent electrode layer on the second cond...

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Hauptverfasser: JOO, Donghyuk, KIM, Minkyun, SON, Seungmi, KIM, Inho, LEE, Sungwook
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Sprache:eng
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creator JOO, Donghyuk
KIM, Minkyun
SON, Seungmi
KIM, Inho
LEE, Sungwook
description A semiconductor light emitting device including a substrate; a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially stacked on the substrate; a transparent electrode layer on the second conductivity-type semiconductor layer; a first insulating layer on the transparent electrode layer and having a plurality of first through-holes; a multilayer insulating structure on the first insulating layer and having a plurality of second through-holes overlapping the plurality of first through-holes, respectively, the multilayer insulating structure being spaced apart from an edge of the light emitting structure; a reflective electrode layer on the multilayer insulating structure and connected to the transparent electrode layer through the plurality of first through-holes and the plurality of second through-holes; and a second insulating layer between the multilayer insulating structure and the reflective electrode layer.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2023047372A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2023047372A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2023047372A13</originalsourceid><addsrcrecordid>eNrjZFAOdvX1dPb3cwl1DvEPUvDxdPcIUQAKhYR4-rkruLiGeTq78jCwpiXmFKfyQmluBmU31xBnD93Ugvz41OKCxOTUvNSS-NBgIwMjYwMTc2NzI0dDY-JUAQD01iPC</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMICONDUCTOR LIGHT EMITTING DEVICE</title><source>esp@cenet</source><creator>JOO, Donghyuk ; KIM, Minkyun ; SON, Seungmi ; KIM, Inho ; LEE, Sungwook</creator><creatorcontrib>JOO, Donghyuk ; KIM, Minkyun ; SON, Seungmi ; KIM, Inho ; LEE, Sungwook</creatorcontrib><description>A semiconductor light emitting device including a substrate; a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially stacked on the substrate; a transparent electrode layer on the second conductivity-type semiconductor layer; a first insulating layer on the transparent electrode layer and having a plurality of first through-holes; a multilayer insulating structure on the first insulating layer and having a plurality of second through-holes overlapping the plurality of first through-holes, respectively, the multilayer insulating structure being spaced apart from an edge of the light emitting structure; a reflective electrode layer on the multilayer insulating structure and connected to the transparent electrode layer through the plurality of first through-holes and the plurality of second through-holes; and a second insulating layer between the multilayer insulating structure and the reflective electrode layer.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230216&amp;DB=EPODOC&amp;CC=US&amp;NR=2023047372A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230216&amp;DB=EPODOC&amp;CC=US&amp;NR=2023047372A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>JOO, Donghyuk</creatorcontrib><creatorcontrib>KIM, Minkyun</creatorcontrib><creatorcontrib>SON, Seungmi</creatorcontrib><creatorcontrib>KIM, Inho</creatorcontrib><creatorcontrib>LEE, Sungwook</creatorcontrib><title>SEMICONDUCTOR LIGHT EMITTING DEVICE</title><description>A semiconductor light emitting device including a substrate; a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially stacked on the substrate; a transparent electrode layer on the second conductivity-type semiconductor layer; a first insulating layer on the transparent electrode layer and having a plurality of first through-holes; a multilayer insulating structure on the first insulating layer and having a plurality of second through-holes overlapping the plurality of first through-holes, respectively, the multilayer insulating structure being spaced apart from an edge of the light emitting structure; a reflective electrode layer on the multilayer insulating structure and connected to the transparent electrode layer through the plurality of first through-holes and the plurality of second through-holes; and a second insulating layer between the multilayer insulating structure and the reflective electrode layer.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFAOdvX1dPb3cwl1DvEPUvDxdPcIUQAKhYR4-rkruLiGeTq78jCwpiXmFKfyQmluBmU31xBnD93Ugvz41OKCxOTUvNSS-NBgIwMjYwMTc2NzI0dDY-JUAQD01iPC</recordid><startdate>20230216</startdate><enddate>20230216</enddate><creator>JOO, Donghyuk</creator><creator>KIM, Minkyun</creator><creator>SON, Seungmi</creator><creator>KIM, Inho</creator><creator>LEE, Sungwook</creator><scope>EVB</scope></search><sort><creationdate>20230216</creationdate><title>SEMICONDUCTOR LIGHT EMITTING DEVICE</title><author>JOO, Donghyuk ; KIM, Minkyun ; SON, Seungmi ; KIM, Inho ; LEE, Sungwook</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2023047372A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>JOO, Donghyuk</creatorcontrib><creatorcontrib>KIM, Minkyun</creatorcontrib><creatorcontrib>SON, Seungmi</creatorcontrib><creatorcontrib>KIM, Inho</creatorcontrib><creatorcontrib>LEE, Sungwook</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>JOO, Donghyuk</au><au>KIM, Minkyun</au><au>SON, Seungmi</au><au>KIM, Inho</au><au>LEE, Sungwook</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMICONDUCTOR LIGHT EMITTING DEVICE</title><date>2023-02-16</date><risdate>2023</risdate><abstract>A semiconductor light emitting device including a substrate; a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer sequentially stacked on the substrate; a transparent electrode layer on the second conductivity-type semiconductor layer; a first insulating layer on the transparent electrode layer and having a plurality of first through-holes; a multilayer insulating structure on the first insulating layer and having a plurality of second through-holes overlapping the plurality of first through-holes, respectively, the multilayer insulating structure being spaced apart from an edge of the light emitting structure; a reflective electrode layer on the multilayer insulating structure and connected to the transparent electrode layer through the plurality of first through-holes and the plurality of second through-holes; and a second insulating layer between the multilayer insulating structure and the reflective electrode layer.</abstract><oa>free_for_read</oa></addata></record>
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subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title SEMICONDUCTOR LIGHT EMITTING DEVICE
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-02T00%3A06%3A33IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=JOO,%20Donghyuk&rft.date=2023-02-16&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2023047372A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true