SEMI-CIRCLE DRAIN SIDE SELECT GATE MAINTENANCE BY SELECTIVE SEMI-CIRCLE DUMMY WORD LINE PROGRAM

SEMI-CIRCLE DRAIN SIDE SELECT GATE MAINTENANCE BY SELECTIVE SEMI-CIRCLE DUMMY WORD LINE PROGRAM

A memory apparatus and method of operation are provided. The apparatus includes apparatus including memory cells connected to word lines including at least one dummy word line and data word lines. The memory cells are arranged in strings and are configured to retain a threshold voltage. The apparatu...

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Hauptverfasser: Dutta, Deepanshu, Hemink, Gerrit Jan, Yang, Xiang, Mukherjee, Shubhajit
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Sprache:eng
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INFORMATION STORAGE
PHYSICS
STATIC STORES
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creator Dutta, Deepanshu
Hemink, Gerrit Jan
Yang, Xiang
Mukherjee, Shubhajit
description A memory apparatus and method of operation are provided. The apparatus includes apparatus including memory cells connected to word lines including at least one dummy word line and data word lines. The memory cells are arranged in strings and are configured to retain a threshold voltage. The apparatus also includes a control means coupled to the word lines and the strings and configured to identify ones of the memory cells connected to the at least one dummy word line with the threshold voltage being below a predetermined detection voltage threshold following an erase operation. The control means is also configured to selectively apply at least one programming pulse of a maintenance program voltage to the at least one dummy word line to program the ones of the memory cells connected to the at least one dummy word line having the threshold voltage being below the predetermined detection voltage threshold.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2023046677A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2023046677A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2023046677A13</originalsourceid><addsrcrecordid>eNrjZIgPdvX11HX2DHL2cVVwCXL09FMI9nRxVQh29XF1DlFwdwxxVfAFioa4-jn6ObsqOEVCpTzDQIqQ9Ib6-kYqhPsHuSj4ePq5KgQE-bsHOfryMLCmJeYUp_JCaW4GZTfXEGcP3dSC_PjU4oLE5NS81JL40GAjAyNjAxMzM3NzR0Nj4lQBANs3M7w</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>SEMI-CIRCLE DRAIN SIDE SELECT GATE MAINTENANCE BY SELECTIVE SEMI-CIRCLE DUMMY WORD LINE PROGRAM</title><source>esp@cenet</source><creator>Dutta, Deepanshu ; Hemink, Gerrit Jan ; Yang, Xiang ; Mukherjee, Shubhajit</creator><creatorcontrib>Dutta, Deepanshu ; Hemink, Gerrit Jan ; Yang, Xiang ; Mukherjee, Shubhajit</creatorcontrib><description>A memory apparatus and method of operation are provided. The apparatus includes apparatus including memory cells connected to word lines including at least one dummy word line and data word lines. The memory cells are arranged in strings and are configured to retain a threshold voltage. The apparatus also includes a control means coupled to the word lines and the strings and configured to identify ones of the memory cells connected to the at least one dummy word line with the threshold voltage being below a predetermined detection voltage threshold following an erase operation. The control means is also configured to selectively apply at least one programming pulse of a maintenance program voltage to the at least one dummy word line to program the ones of the memory cells connected to the at least one dummy word line having the threshold voltage being below the predetermined detection voltage threshold.</description><language>eng</language><subject>INFORMATION STORAGE ; PHYSICS ; STATIC STORES</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230216&amp;DB=EPODOC&amp;CC=US&amp;NR=2023046677A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76290</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20230216&amp;DB=EPODOC&amp;CC=US&amp;NR=2023046677A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Dutta, Deepanshu</creatorcontrib><creatorcontrib>Hemink, Gerrit Jan</creatorcontrib><creatorcontrib>Yang, Xiang</creatorcontrib><creatorcontrib>Mukherjee, Shubhajit</creatorcontrib><title>SEMI-CIRCLE DRAIN SIDE SELECT GATE MAINTENANCE BY SELECTIVE SEMI-CIRCLE DUMMY WORD LINE PROGRAM</title><description>A memory apparatus and method of operation are provided. The apparatus includes apparatus including memory cells connected to word lines including at least one dummy word line and data word lines. The memory cells are arranged in strings and are configured to retain a threshold voltage. The apparatus also includes a control means coupled to the word lines and the strings and configured to identify ones of the memory cells connected to the at least one dummy word line with the threshold voltage being below a predetermined detection voltage threshold following an erase operation. The control means is also configured to selectively apply at least one programming pulse of a maintenance program voltage to the at least one dummy word line to program the ones of the memory cells connected to the at least one dummy word line having the threshold voltage being below the predetermined detection voltage threshold.</description><subject>INFORMATION STORAGE</subject><subject>PHYSICS</subject><subject>STATIC STORES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZIgPdvX11HX2DHL2cVVwCXL09FMI9nRxVQh29XF1DlFwdwxxVfAFioa4-jn6ObsqOEVCpTzDQIqQ9Ib6-kYqhPsHuSj4ePq5KgQE-bsHOfryMLCmJeYUp_JCaW4GZTfXEGcP3dSC_PjU4oLE5NS81JL40GAjAyNjAxMzM3NzR0Nj4lQBANs3M7w</recordid><startdate>20230216</startdate><enddate>20230216</enddate><creator>Dutta, Deepanshu</creator><creator>Hemink, Gerrit Jan</creator><creator>Yang, Xiang</creator><creator>Mukherjee, Shubhajit</creator><scope>EVB</scope></search><sort><creationdate>20230216</creationdate><title>SEMI-CIRCLE DRAIN SIDE SELECT GATE MAINTENANCE BY SELECTIVE SEMI-CIRCLE DUMMY WORD LINE PROGRAM</title><author>Dutta, Deepanshu ; Hemink, Gerrit Jan ; Yang, Xiang ; Mukherjee, Shubhajit</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2023046677A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>INFORMATION STORAGE</topic><topic>PHYSICS</topic><topic>STATIC STORES</topic><toplevel>online_resources</toplevel><creatorcontrib>Dutta, Deepanshu</creatorcontrib><creatorcontrib>Hemink, Gerrit Jan</creatorcontrib><creatorcontrib>Yang, Xiang</creatorcontrib><creatorcontrib>Mukherjee, Shubhajit</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Dutta, Deepanshu</au><au>Hemink, Gerrit Jan</au><au>Yang, Xiang</au><au>Mukherjee, Shubhajit</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>SEMI-CIRCLE DRAIN SIDE SELECT GATE MAINTENANCE BY SELECTIVE SEMI-CIRCLE DUMMY WORD LINE PROGRAM</title><date>2023-02-16</date><risdate>2023</risdate><abstract>A memory apparatus and method of operation are provided. The apparatus includes apparatus including memory cells connected to word lines including at least one dummy word line and data word lines. The memory cells are arranged in strings and are configured to retain a threshold voltage. The apparatus also includes a control means coupled to the word lines and the strings and configured to identify ones of the memory cells connected to the at least one dummy word line with the threshold voltage being below a predetermined detection voltage threshold following an erase operation. The control means is also configured to selectively apply at least one programming pulse of a maintenance program voltage to the at least one dummy word line to program the ones of the memory cells connected to the at least one dummy word line having the threshold voltage being below the predetermined detection voltage threshold.</abstract><oa>free_for_read</oa></addata></record>
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subjects INFORMATION STORAGE
PHYSICS
STATIC STORES
title SEMI-CIRCLE DRAIN SIDE SELECT GATE MAINTENANCE BY SELECTIVE SEMI-CIRCLE DUMMY WORD LINE PROGRAM
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-02T16%3A56%3A59IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Dutta,%20Deepanshu&rft.date=2023-02-16&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2023046677A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true