METROLOGY METHOD, TARGET AND SUBSTRATE
A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design includi...
Gespeichert in:
| Hauptverfasser: | , , , , , , , , , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | Van Der Schaar, Maurits Den Boef, Arie Jeffrey Beltman, Johannes Marcus Maria Adam, Omer Abubaker Omer BHATTACHARYYA, Kaustuve Liu, Xing Lan Fuchs, Andreas Van Haren, Richard Johannes Franciscus Jak, Martin Jacobus Johan Fouquet, Christophe David Van Buel, Henricus Wilhelmus Maria Kubis, Michael Smilde, Hendrik Jan Hidde |
| description | A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2023016664A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2023016664A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2023016664A13</originalsourceid><addsrcrecordid>eNrjZFDzdQ0J8vfxd49UALI8_F10FEIcg9xdQxQc_VwUgkOdgkOCHENceRhY0xJzilN5oTQ3g7Kba4izh25qQX58anFBYnJqXmpJfGiwkYGRsYGhmZmZiaOhMXGqAFbSJIM</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METROLOGY METHOD, TARGET AND SUBSTRATE</title><source>esp@cenet</source><creator>Van Der Schaar, Maurits ; Den Boef, Arie Jeffrey ; Beltman, Johannes Marcus Maria ; Adam, Omer Abubaker Omer ; BHATTACHARYYA, Kaustuve ; Liu, Xing Lan ; Fuchs, Andreas ; Van Haren, Richard Johannes Franciscus ; Jak, Martin Jacobus Johan ; Fouquet, Christophe David ; Van Buel, Henricus Wilhelmus Maria ; Kubis, Michael ; Smilde, Hendrik Jan Hidde</creator><creatorcontrib>Van Der Schaar, Maurits ; Den Boef, Arie Jeffrey ; Beltman, Johannes Marcus Maria ; Adam, Omer Abubaker Omer ; BHATTACHARYYA, Kaustuve ; Liu, Xing Lan ; Fuchs, Andreas ; Van Haren, Richard Johannes Franciscus ; Jak, Martin Jacobus Johan ; Fouquet, Christophe David ; Van Buel, Henricus Wilhelmus Maria ; Kubis, Michael ; Smilde, Hendrik Jan Hidde</creatorcontrib><description>A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.</description><language>eng</language><subject>APPARATUS SPECIALLY ADAPTED THEREFOR ; CINEMATOGRAPHY ; ELECTROGRAPHY ; HOLOGRAPHY ; MATERIALS THEREFOR ; MEASURING ; MEASURING ANGLES ; MEASURING AREAS ; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS ; MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS ; ORIGINALS THEREFOR ; PHOTOGRAPHY ; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES ; PHYSICS ; TESTING</subject><creationdate>2023</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230119&DB=EPODOC&CC=US&NR=2023016664A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20230119&DB=EPODOC&CC=US&NR=2023016664A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>Van Der Schaar, Maurits</creatorcontrib><creatorcontrib>Den Boef, Arie Jeffrey</creatorcontrib><creatorcontrib>Beltman, Johannes Marcus Maria</creatorcontrib><creatorcontrib>Adam, Omer Abubaker Omer</creatorcontrib><creatorcontrib>BHATTACHARYYA, Kaustuve</creatorcontrib><creatorcontrib>Liu, Xing Lan</creatorcontrib><creatorcontrib>Fuchs, Andreas</creatorcontrib><creatorcontrib>Van Haren, Richard Johannes Franciscus</creatorcontrib><creatorcontrib>Jak, Martin Jacobus Johan</creatorcontrib><creatorcontrib>Fouquet, Christophe David</creatorcontrib><creatorcontrib>Van Buel, Henricus Wilhelmus Maria</creatorcontrib><creatorcontrib>Kubis, Michael</creatorcontrib><creatorcontrib>Smilde, Hendrik Jan Hidde</creatorcontrib><title>METROLOGY METHOD, TARGET AND SUBSTRATE</title><description>A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.</description><subject>APPARATUS SPECIALLY ADAPTED THEREFOR</subject><subject>CINEMATOGRAPHY</subject><subject>ELECTROGRAPHY</subject><subject>HOLOGRAPHY</subject><subject>MATERIALS THEREFOR</subject><subject>MEASURING</subject><subject>MEASURING ANGLES</subject><subject>MEASURING AREAS</subject><subject>MEASURING IRREGULARITIES OF SURFACES OR CONTOURS</subject><subject>MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS</subject><subject>ORIGINALS THEREFOR</subject><subject>PHOTOGRAPHY</subject><subject>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</subject><subject>PHYSICS</subject><subject>TESTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2023</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZFDzdQ0J8vfxd49UALI8_F10FEIcg9xdQxQc_VwUgkOdgkOCHENceRhY0xJzilN5oTQ3g7Kba4izh25qQX58anFBYnJqXmpJfGiwkYGRsYGhmZmZiaOhMXGqAFbSJIM</recordid><startdate>20230119</startdate><enddate>20230119</enddate><creator>Van Der Schaar, Maurits</creator><creator>Den Boef, Arie Jeffrey</creator><creator>Beltman, Johannes Marcus Maria</creator><creator>Adam, Omer Abubaker Omer</creator><creator>BHATTACHARYYA, Kaustuve</creator><creator>Liu, Xing Lan</creator><creator>Fuchs, Andreas</creator><creator>Van Haren, Richard Johannes Franciscus</creator><creator>Jak, Martin Jacobus Johan</creator><creator>Fouquet, Christophe David</creator><creator>Van Buel, Henricus Wilhelmus Maria</creator><creator>Kubis, Michael</creator><creator>Smilde, Hendrik Jan Hidde</creator><scope>EVB</scope></search><sort><creationdate>20230119</creationdate><title>METROLOGY METHOD, TARGET AND SUBSTRATE</title><author>Van Der Schaar, Maurits ; Den Boef, Arie Jeffrey ; Beltman, Johannes Marcus Maria ; Adam, Omer Abubaker Omer ; BHATTACHARYYA, Kaustuve ; Liu, Xing Lan ; Fuchs, Andreas ; Van Haren, Richard Johannes Franciscus ; Jak, Martin Jacobus Johan ; Fouquet, Christophe David ; Van Buel, Henricus Wilhelmus Maria ; Kubis, Michael ; Smilde, Hendrik Jan Hidde</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2023016664A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2023</creationdate><topic>APPARATUS SPECIALLY ADAPTED THEREFOR</topic><topic>CINEMATOGRAPHY</topic><topic>ELECTROGRAPHY</topic><topic>HOLOGRAPHY</topic><topic>MATERIALS THEREFOR</topic><topic>MEASURING</topic><topic>MEASURING ANGLES</topic><topic>MEASURING AREAS</topic><topic>MEASURING IRREGULARITIES OF SURFACES OR CONTOURS</topic><topic>MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS</topic><topic>ORIGINALS THEREFOR</topic><topic>PHOTOGRAPHY</topic><topic>PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES</topic><topic>PHYSICS</topic><topic>TESTING</topic><toplevel>online_resources</toplevel><creatorcontrib>Van Der Schaar, Maurits</creatorcontrib><creatorcontrib>Den Boef, Arie Jeffrey</creatorcontrib><creatorcontrib>Beltman, Johannes Marcus Maria</creatorcontrib><creatorcontrib>Adam, Omer Abubaker Omer</creatorcontrib><creatorcontrib>BHATTACHARYYA, Kaustuve</creatorcontrib><creatorcontrib>Liu, Xing Lan</creatorcontrib><creatorcontrib>Fuchs, Andreas</creatorcontrib><creatorcontrib>Van Haren, Richard Johannes Franciscus</creatorcontrib><creatorcontrib>Jak, Martin Jacobus Johan</creatorcontrib><creatorcontrib>Fouquet, Christophe David</creatorcontrib><creatorcontrib>Van Buel, Henricus Wilhelmus Maria</creatorcontrib><creatorcontrib>Kubis, Michael</creatorcontrib><creatorcontrib>Smilde, Hendrik Jan Hidde</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Van Der Schaar, Maurits</au><au>Den Boef, Arie Jeffrey</au><au>Beltman, Johannes Marcus Maria</au><au>Adam, Omer Abubaker Omer</au><au>BHATTACHARYYA, Kaustuve</au><au>Liu, Xing Lan</au><au>Fuchs, Andreas</au><au>Van Haren, Richard Johannes Franciscus</au><au>Jak, Martin Jacobus Johan</au><au>Fouquet, Christophe David</au><au>Van Buel, Henricus Wilhelmus Maria</au><au>Kubis, Michael</au><au>Smilde, Hendrik Jan Hidde</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METROLOGY METHOD, TARGET AND SUBSTRATE</title><date>2023-01-19</date><risdate>2023</risdate><abstract>A diffraction measurement target that has at least a first sub-target and at least a second sub-target, and wherein (1) the first and second sub-targets each include a pair of periodic structures and the first sub-target has a different design than the second sub-target, the different design including the first sub-target periodic structures having a different pitch, feature width, space width, and/or segmentation than the second sub-target periodic structure or (2) the first and second sub-targets respectively include a first and second periodic structure in a first layer, and a third periodic structure is located at least partly underneath the first periodic structure in a second layer under the first layer and there being no periodic structure underneath the second periodic structure in the second layer, and a fourth periodic structure is located at least partly underneath the second periodic structure in a third layer under the second layer.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_US2023016664A1 |
| source | esp@cenet |
| subjects | APPARATUS SPECIALLY ADAPTED THEREFOR CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR MEASURING MEASURING ANGLES MEASURING AREAS MEASURING IRREGULARITIES OF SURFACES OR CONTOURS MEASURING LENGTH, THICKNESS OR SIMILAR LINEARDIMENSIONS ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS TESTING |
| title | METROLOGY METHOD, TARGET AND SUBSTRATE |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-02-11T13%3A58%3A38IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=Van%20Der%20Schaar,%20Maurits&rft.date=2023-01-19&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2023016664A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |