CONFORMAL TITANIUM NITRIDE-BASED THIN FILMS AND METHODS OF FORMING SAME
The disclosed technology generally relates to forming a titanium nitride-based thin films, and more particularly to a conformal and smooth titanium nitride-based thin films and methods of forming the same. In one aspect, a method of forming a thin film comprising one or both of TiSiN or TiAlN compri...
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| creator | Okuyama, Yoshikazu Naghibolashrafi, Nariman Nie, Bunsen B Mukherjee, Niloy Kim, Hae Young Heo, Jae Seok Mack, Jerry Jung, Sung-Hoon Chugh, Srishti Rathi, Somilkumar J |
| description | The disclosed technology generally relates to forming a titanium nitride-based thin films, and more particularly to a conformal and smooth titanium nitride-based thin films and methods of forming the same. In one aspect, a method of forming a thin film comprising one or both of TiSiN or TiAlN comprises exposing a semiconductor substrate to one or more vapor deposition cycles at a pressure in a reaction chamber greater than 1 torr, wherein a plurality of the vapor deposition cycles comprises an exposure to a titanium (Ti) precursor, an exposure to a nitrogen (N) precursor and an exposure to one or both of a silicon (Si) precursor or an aluminum (Al) precursor. |
| format | Patent |
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| subjects | BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES |
| title | CONFORMAL TITANIUM NITRIDE-BASED THIN FILMS AND METHODS OF FORMING SAME |
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