CONFORMAL TITANIUM NITRIDE-BASED THIN FILMS AND METHODS OF FORMING SAME

CONFORMAL TITANIUM NITRIDE-BASED THIN FILMS AND METHODS OF FORMING SAME

The disclosed technology generally relates to forming a titanium nitride-based thin films, and more particularly to a conformal and smooth titanium nitride-based thin films and methods of forming the same. In one aspect, a method of forming a thin film comprising one or both of TiSiN or TiAlN compri...

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Bibliographische Detailangaben
Hauptverfasser: Okuyama, Yoshikazu, Naghibolashrafi, Nariman, Nie, Bunsen B, Mukherjee, Niloy, Kim, Hae Young, Heo, Jae Seok, Mack, Jerry, Jung, Sung-Hoon, Chugh, Srishti, Rathi, Somilkumar J
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The disclosed technology generally relates to forming a titanium nitride-based thin films, and more particularly to a conformal and smooth titanium nitride-based thin films and methods of forming the same. In one aspect, a method of forming a thin film comprising one or both of TiSiN or TiAlN comprises exposing a semiconductor substrate to one or more vapor deposition cycles at a pressure in a reaction chamber greater than 1 torr, wherein a plurality of the vapor deposition cycles comprises an exposure to a titanium (Ti) precursor, an exposure to a nitrogen (N) precursor and an exposure to one or both of a silicon (Si) precursor or an aluminum (Al) precursor.