STRUCTURE MANUFACTURING METHOD

A structure is manufactured by forming a mask that has an opening pattern on a surface of a substrate, etching the surface of the substrate with the mask to form a recessed portion corresponding to the opening pattern of the mask, forming a thin film including aluminum on a bottom surface of the rec...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: UMEZAWA, Tomokazu
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator UMEZAWA, Tomokazu
description A structure is manufactured by forming a mask that has an opening pattern on a surface of a substrate, etching the surface of the substrate with the mask to form a recessed portion corresponding to the opening pattern of the mask, forming a thin film including aluminum on a bottom surface of the recessed portion in a state where the mask remains, treating the thin film including aluminum with hot water to change the thin film into a fine recessed and projected layer including alumina hydrate smaller than the recessed portion, etching the bottom surface of the recessed portion, on which the fine recessed and projected layer is formed, in a state where the mask remains to form a fine recessed and projected structure on the bottom surface of the recessed portion, and thereafter removing the mask and the fine recessed and projected structure, which remains after the etching step.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2022415664A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2022415664A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2022415664A13</originalsourceid><addsrcrecordid>eNrjZJALDgkKdQ4JDXJV8HX0C3VzBLE9_dwVfF1DPPxdeBhY0xJzilN5oTQ3g7Kba4izh25qQX58anFBYnJqXmpJfGiwkYGRkYmhqZmZiaOhMXGqAF-RIp8</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>STRUCTURE MANUFACTURING METHOD</title><source>esp@cenet</source><creator>UMEZAWA, Tomokazu</creator><creatorcontrib>UMEZAWA, Tomokazu</creatorcontrib><description>A structure is manufactured by forming a mask that has an opening pattern on a surface of a substrate, etching the surface of the substrate with the mask to form a recessed portion corresponding to the opening pattern of the mask, forming a thin film including aluminum on a bottom surface of the recessed portion in a state where the mask remains, treating the thin film including aluminum with hot water to change the thin film into a fine recessed and projected layer including alumina hydrate smaller than the recessed portion, etching the bottom surface of the recessed portion, on which the fine recessed and projected layer is formed, in a state where the mask remains to form a fine recessed and projected structure on the bottom surface of the recessed portion, and thereafter removing the mask and the fine recessed and projected structure, which remains after the etching step.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2022</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20221229&amp;DB=EPODOC&amp;CC=US&amp;NR=2022415664A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25563,76418</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20221229&amp;DB=EPODOC&amp;CC=US&amp;NR=2022415664A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>UMEZAWA, Tomokazu</creatorcontrib><title>STRUCTURE MANUFACTURING METHOD</title><description>A structure is manufactured by forming a mask that has an opening pattern on a surface of a substrate, etching the surface of the substrate with the mask to form a recessed portion corresponding to the opening pattern of the mask, forming a thin film including aluminum on a bottom surface of the recessed portion in a state where the mask remains, treating the thin film including aluminum with hot water to change the thin film into a fine recessed and projected layer including alumina hydrate smaller than the recessed portion, etching the bottom surface of the recessed portion, on which the fine recessed and projected layer is formed, in a state where the mask remains to form a fine recessed and projected structure on the bottom surface of the recessed portion, and thereafter removing the mask and the fine recessed and projected structure, which remains after the etching step.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2022</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZJALDgkKdQ4JDXJV8HX0C3VzBLE9_dwVfF1DPPxdeBhY0xJzilN5oTQ3g7Kba4izh25qQX58anFBYnJqXmpJfGiwkYGRkYmhqZmZiaOhMXGqAF-RIp8</recordid><startdate>20221229</startdate><enddate>20221229</enddate><creator>UMEZAWA, Tomokazu</creator><scope>EVB</scope></search><sort><creationdate>20221229</creationdate><title>STRUCTURE MANUFACTURING METHOD</title><author>UMEZAWA, Tomokazu</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2022415664A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2022</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>UMEZAWA, Tomokazu</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>UMEZAWA, Tomokazu</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>STRUCTURE MANUFACTURING METHOD</title><date>2022-12-29</date><risdate>2022</risdate><abstract>A structure is manufactured by forming a mask that has an opening pattern on a surface of a substrate, etching the surface of the substrate with the mask to form a recessed portion corresponding to the opening pattern of the mask, forming a thin film including aluminum on a bottom surface of the recessed portion in a state where the mask remains, treating the thin film including aluminum with hot water to change the thin film into a fine recessed and projected layer including alumina hydrate smaller than the recessed portion, etching the bottom surface of the recessed portion, on which the fine recessed and projected layer is formed, in a state where the mask remains to form a fine recessed and projected structure on the bottom surface of the recessed portion, and thereafter removing the mask and the fine recessed and projected structure, which remains after the etching step.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US2022415664A1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title STRUCTURE MANUFACTURING METHOD
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-08T09%3A34%3A38IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=UMEZAWA,%20Tomokazu&rft.date=2022-12-29&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2022415664A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true